92% start-up time reduction by variation-tolerant chirp injection (CI) and negative resistance booster (NRB) in 39MHz crystal oscillator. Iguchi, S., Fuketa, H., Sakurai, T., & Takamiya, M. In 2014 Symposium on VLSI Circuits Digest of Technical Papers, pages 1–2, June, 2014. doi abstract bibtex To reduce the start-up time of a crystal oscillator (XO), a chirp injection (CI) and a negative resistance booster (NRB) are proposed. By combining CI and NRB, the measured start-up time of a 39-MHz XO in 180-nm CMOS is reduced by 92% from 2.1ms to 158μs, which is the shortest time in the published XO's. The measured start-up time variations due to the ±20% supply voltage change or the temperature change are less than 13%.
@inproceedings{iguchi_92_2014,
title = {92\% start-up time reduction by variation-tolerant chirp injection ({CI}) and negative resistance booster ({NRB}) in 39MHz crystal oscillator},
doi = {10.1109/VLSIC.2014.6858449},
abstract = {To reduce the start-up time of a crystal oscillator (XO), a chirp injection (CI) and a negative resistance booster (NRB) are proposed. By combining CI and NRB, the measured start-up time of a 39-MHz XO in 180-nm CMOS is reduced by 92\% from 2.1ms to 158μs, which is the shortest time in the published XO's. The measured start-up time variations due to the ±20\% supply voltage change or the temperature change are less than 13\%.},
booktitle = {2014 {Symposium} on {VLSI} {Circuits} {Digest} of {Technical} {Papers}},
author = {Iguchi, S. and Fuketa, H. and Sakurai, T. and Takamiya, M.},
month = jun,
year = {2014},
pages = {1--2}
}
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