MAGNETIC PROPERTIES OF IRON-DOPED GALLIUM ARSENIDE. Isaev-Ivanov, V., Kolchanova, N., Masterov, V., Nasledov, D., & Talalakin, G. Sov Phys Semicond, 7(2):299-300, 1973. cited By 8
Paper abstract bibtex Iron doped (0. 1-10wt%) GaAs crystals grown by the Stockbarger method were studied concerning the electron spin resonance in the 80-300K range. The static magnetic susceptibility was determined in the 80-1000K range.
@ARTICLE{Isaev-Ivanov1973299,
author={Isaev-Ivanov, V.V. and Kolchanova, N.M. and Masterov, V.F. and Nasledov, D.N. and Talalakin, G.N.},
title={MAGNETIC PROPERTIES OF IRON-DOPED GALLIUM ARSENIDE.},
journal={Sov Phys Semicond},
year={1973},
volume={7},
number={2},
pages={299-300},
note={cited By 8},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-0015658135&partnerID=40&md5=9b63d8efa55f1421547507e506eb3222},
abstract={Iron doped (0. 1-10wt%) GaAs crystals grown by the Stockbarger method were studied concerning the electron spin resonance in the 80-300K range. The static magnetic susceptibility was determined in the 80-1000K range.},
correspondence_address1={Isaev-Ivanov, V.V.},
coden={SPSEA},
abbrev_source_title={Sov Phys Semicond},
document_type={Article},
source={Scopus},
}
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