Finite GB and MOS parasitic capacitance effects in a class of MOSFET-C filters. Ismail, M., Kim, D., Y., & Shin, H., K. In Midwest Symposium on Circuits and Systems, volume 2, 1991. abstract bibtex A discussion is presented of the effects of the finite op-amp gain bandwidth (GB) and the MOS intrinsic and extrinsic parasitic capacitances on the performance of a recently reported class of MOSFET-C continuous-time integrated filters. This class of filters is designed directly in the MOS domain, without having to develop an intermediate active-RC prototype. It is shown that the structures are insensitive to intrinsic parasitic capacitances. Ways to compensate for the GB effects are proposed.
@inProceedings{
title = {Finite GB and MOS parasitic capacitance effects in a class of MOSFET-C filters},
type = {inProceedings},
year = {1991},
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abstract = {A discussion is presented of the effects of the finite op-amp gain bandwidth (GB) and the MOS intrinsic and extrinsic parasitic capacitances on the performance of a recently reported class of MOSFET-C continuous-time integrated filters. This class of filters is designed directly in the MOS domain, without having to develop an intermediate active-RC prototype. It is shown that the structures are insensitive to intrinsic parasitic capacitances. Ways to compensate for the GB effects are proposed.},
bibtype = {inProceedings},
author = {Ismail, Mohammed and Kim, Dong Yong and Shin, Hong Kyu},
booktitle = {Midwest Symposium on Circuits and Systems}
}
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