@inProceedings{
 title = {Finite GB and MOS parasitic capacitance effects in a class of MOSFET-C filters},
 type = {inProceedings},
 year = {1991},
 identifiers = {[object Object]},
 volume = {2},
 id = {4157f6ca-50fd-312f-acb5-49c1932aef8d},
 created = {2017-12-04T05:35:02.724Z},
 file_attached = {false},
 profile_id = {99d7e05e-a704-3549-ada2-dfc74a2d55ec},
 last_modified = {2017-12-04T05:35:02.724Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {false},
 hidden = {false},
 private_publication = {false},
 abstract = {A discussion is presented of the effects of the finite op-amp gain bandwidth (GB) and the MOS intrinsic and extrinsic parasitic capacitances on the performance of a recently reported class of MOSFET-C continuous-time integrated filters. This class of filters is designed directly in the MOS domain, without having to develop an intermediate active-RC prototype. It is shown that the structures are insensitive to intrinsic parasitic capacitances. Ways to compensate for the GB effects are proposed.},
 bibtype = {inProceedings},
 author = {Ismail, Mohammed and Kim, Dong Yong and Shin, Hong Kyu},
 booktitle = {Midwest Symposium on Circuits and Systems}
}

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