@article{
 title = {A New MOSFET-C Universal Filter Structure for VLSI},
 type = {article},
 year = {1988},
 identifiers = {[object Object]},
 volume = {23},
 id = {73dbc8bf-3154-3982-8a56-f65c617839cf},
 created = {2017-12-04T05:35:02.938Z},
 file_attached = {false},
 profile_id = {99d7e05e-a704-3549-ada2-dfc74a2d55ec},
 last_modified = {2017-12-04T05:35:02.938Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {false},
 hidden = {false},
 private_publication = {false},
 abstract = {A new continuous-time all-MOS universal filter structure is proposed. The new structure is based on the MOSFET-C design approach. It achieves complete MOS nonlinearity cancellation and does not require the use of fully balanced op amps. General topological requirements that are necessary for the conversion of active-RC prototypes to MOSFET-C counterparts, such that MOS nonlinearity cancellation is achieved, are established. Accordingly, a new universal active-RC prototype filter structure, which meets the necessary requirements, is presented and its MOSFET-C version is developed. Nonideal effects that may degrade the performance at high frequency are discussed and ways for improvement are proposed. Results obtained from a test chip have verified the viability of the proposed structure. The chip is an implementation of a MOSFET-C universal filter in a 3.5-üm CMOS process. The filter is successfully tuned over a wide range of pole frequencies (0 100 kHz) using op amps with a measured gain bandwidth (GB) of only 1.2 MHz. © 1988 IEEE},
 bibtype = {article},
 author = {Ismail, M. and Smith, S.V. and Beale, R.G.},
 journal = {IEEE Journal of Solid-State Circuits},
 number = {1}
}

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