Structural relaxation of Al–W amorphous thin films. Ivkov, J., Radić, N., Tonejc, A., & Car, T. Journal of Non-Crystalline Solids, 319(3):232-240, 5, 2003. ![Structural relaxation of Al–W amorphous thin films [link]](https://bibbase.org/img/filetypes/link.svg "link")
Website abstract bibtex The pronounced variation of the electrical resistivity of the amorphous Al-W thin films observed during initial heating above room temperature was examined. Both isochronal and isothermal treatments were performed in order to investigate the effects of the film composition, substrate material, and substrate temperature, on the magnitude of the relaxation phenomena. Regarding the isochronal heating, it was observed that the relaxation effects decreased with an increase of the heating rate, and decreased with the aluminum content in the film. The Al78W22 amorphous thin films were subjected to isothermal annealing for 6 h at a temperature of 515 °C. The effects of the substrate material (alumina ceramic, glass and sapphire), and the deposition temperature (LNT, RT, 200 and 400 °C) were examined. The relaxation decreased in a sequence of: alumina ceramic-glass-sapphire substrates, as well as with an increase of the substrate temperature. An assumed dominant role of the aluminum in the effects observed, was tested by the corresponding investigation of Al-Ti and Cu-Ti amorphous thin films. © 2003 Elsevier Science B.V. All rights reserved.
@article{
title = {Structural relaxation of Al–W amorphous thin films},
type = {article},
year = {2003},
identifiers = {[object Object]},
pages = {232-240},
volume = {319},
websites = {http://linkinghub.elsevier.com/retrieve/pii/S0022309303000097},
month = {5},
id = {2ac844b6-b623-3f21-b704-c1d96cd931ce},
created = {2016-12-15T10:02:50.000Z},
file_attached = {false},
profile_id = {12182ba0-f80b-33ff-8da5-1813b38b682d},
group_id = {60cbc7ed-7d3c-385a-96b0-5920f1dfe2f9},
last_modified = {2017-03-14T16:39:15.352Z},
read = {false},
starred = {false},
authored = {false},
confirmed = {true},
hidden = {false},
citation_key = {Ivkov2003},
private_publication = {false},
abstract = {The pronounced variation of the electrical resistivity of the amorphous Al-W thin films observed during initial heating above room temperature was examined. Both isochronal and isothermal treatments were performed in order to investigate the effects of the film composition, substrate material, and substrate temperature, on the magnitude of the relaxation phenomena. Regarding the isochronal heating, it was observed that the relaxation effects decreased with an increase of the heating rate, and decreased with the aluminum content in the film. The Al78W22 amorphous thin films were subjected to isothermal annealing for 6 h at a temperature of 515 °C. The effects of the substrate material (alumina ceramic, glass and sapphire), and the deposition temperature (LNT, RT, 200 and 400 °C) were examined. The relaxation decreased in a sequence of: alumina ceramic-glass-sapphire substrates, as well as with an increase of the substrate temperature. An assumed dominant role of the aluminum in the effects observed, was tested by the corresponding investigation of Al-Ti and Cu-Ti amorphous thin films. © 2003 Elsevier Science B.V. All rights reserved.},
bibtype = {article},
author = {Ivkov, J and Radić, N and Tonejc, A and Car, T},
journal = {Journal of Non-Crystalline Solids},
number = {3}
}
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{"_id":"Cb2KtRABCZ7cb8axm","bibbaseid":"ivkov-radi-tonejc-car-structuralrelaxationofalwamorphousthinfilms-2003","downloads":0,"creationDate":"2016-12-14T15:31:42.893Z","title":"Structural relaxation of Al–W amorphous thin films","author_short":["Ivkov, J.","Radić, N.","Tonejc, A.","Car, T."],"year":2003,"bibtype":"article","biburl":null,"bibdata":{"title":"Structural relaxation of Al–W amorphous thin films","type":"article","year":"2003","identifiers":"[object Object]","pages":"232-240","volume":"319","websites":"http://linkinghub.elsevier.com/retrieve/pii/S0022309303000097","month":"5","id":"2ac844b6-b623-3f21-b704-c1d96cd931ce","created":"2016-12-15T10:02:50.000Z","file_attached":false,"profile_id":"12182ba0-f80b-33ff-8da5-1813b38b682d","group_id":"60cbc7ed-7d3c-385a-96b0-5920f1dfe2f9","last_modified":"2017-03-14T16:39:15.352Z","read":false,"starred":false,"authored":false,"confirmed":"true","hidden":false,"citation_key":"Ivkov2003","private_publication":false,"abstract":"The pronounced variation of the electrical resistivity of the amorphous Al-W thin films observed during initial heating above room temperature was examined. Both isochronal and isothermal treatments were performed in order to investigate the effects of the film composition, substrate material, and substrate temperature, on the magnitude of the relaxation phenomena. Regarding the isochronal heating, it was observed that the relaxation effects decreased with an increase of the heating rate, and decreased with the aluminum content in the film. The Al78W22 amorphous thin films were subjected to isothermal annealing for 6 h at a temperature of 515 °C. The effects of the substrate material (alumina ceramic, glass and sapphire), and the deposition temperature (LNT, RT, 200 and 400 °C) were examined. The relaxation decreased in a sequence of: alumina ceramic-glass-sapphire substrates, as well as with an increase of the substrate temperature. An assumed dominant role of the aluminum in the effects observed, was tested by the corresponding investigation of Al-Ti and Cu-Ti amorphous thin films. © 2003 Elsevier Science B.V. All rights reserved.","bibtype":"article","author":"Ivkov, J and Radić, N and Tonejc, A and Car, T","journal":"Journal of Non-Crystalline Solids","number":"3","bibtex":"@article{\n title = {Structural relaxation of Al–W amorphous thin films},\n type = {article},\n year = {2003},\n identifiers = {[object Object]},\n pages = {232-240},\n volume = {319},\n websites = {http://linkinghub.elsevier.com/retrieve/pii/S0022309303000097},\n month = {5},\n id = {2ac844b6-b623-3f21-b704-c1d96cd931ce},\n created = {2016-12-15T10:02:50.000Z},\n file_attached = {false},\n profile_id = {12182ba0-f80b-33ff-8da5-1813b38b682d},\n group_id = {60cbc7ed-7d3c-385a-96b0-5920f1dfe2f9},\n last_modified = {2017-03-14T16:39:15.352Z},\n read = {false},\n starred = {false},\n authored = {false},\n confirmed = {true},\n hidden = {false},\n citation_key = {Ivkov2003},\n private_publication = {false},\n abstract = {The pronounced variation of the electrical resistivity of the amorphous Al-W thin films observed during initial heating above room temperature was examined. Both isochronal and isothermal treatments were performed in order to investigate the effects of the film composition, substrate material, and substrate temperature, on the magnitude of the relaxation phenomena. Regarding the isochronal heating, it was observed that the relaxation effects decreased with an increase of the heating rate, and decreased with the aluminum content in the film. The Al78W22 amorphous thin films were subjected to isothermal annealing for 6 h at a temperature of 515 °C. The effects of the substrate material (alumina ceramic, glass and sapphire), and the deposition temperature (LNT, RT, 200 and 400 °C) were examined. The relaxation decreased in a sequence of: alumina ceramic-glass-sapphire substrates, as well as with an increase of the substrate temperature. An assumed dominant role of the aluminum in the effects observed, was tested by the corresponding investigation of Al-Ti and Cu-Ti amorphous thin films. © 2003 Elsevier Science B.V. All rights reserved.},\n bibtype = {article},\n author = {Ivkov, J and Radić, N and Tonejc, A and Car, T},\n journal = {Journal of Non-Crystalline Solids},\n number = {3}\n}","author_short":["Ivkov, J.","Radić, N.","Tonejc, A.","Car, T."],"urls":{"Website":"http://linkinghub.elsevier.com/retrieve/pii/S0022309303000097"},"bibbaseid":"ivkov-radi-tonejc-car-structuralrelaxationofalwamorphousthinfilms-2003","role":"author","downloads":0},"search_terms":["structural","relaxation","amorphous","thin","films","ivkov","radić","tonejc","car"],"keywords":[],"authorIDs":[]}