A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements. Iyer, V., Sheth, J., Zhang, L., Weikle, R. M., & Bowers, S. M. IEEE microwave and wireless technology letters, 2023.
A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements [link]Paper  bibtex   
@article{485,
  author = {Vinay Iyer and Jay Sheth and Linsheng Zhang and Robert M. Weikle and Steven M. Bowers},
  title = {A 15.3-dBm, 18.3% PAE F-Band Power Amplifier in 130-nm InP HBT With Modulation Measurements},
  year = {2023},
  journal = {IEEE microwave and wireless technology letters},
  url = {https://doi.org/10.1109/lmwt.2022.3227755}
}

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