Structural, optical and electrical properties of Sb doped and undoped AgIn1 − xGaxSe2 and Ag(InGa)5Se8 thin films. Jacob, R., Remillard, S. K., DeYoung, P. A., Deshpande, U. P., Shripathi, T., Ganesan, V., Naduvath, J., Sreenivasan, P. V., Philip, & Reena, R. physica status solidi (a), 211(3):714--722, March, 2014. ![Structural, optical and electrical properties of Sb doped and undoped AgIn1 − xGaxSe2 and Ag(InGa)5Se8 thin films [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Antimony doped and undoped nanostructured thin films of AgIn1 − xGaxSe2 and Ag(InGa)5Se8 on optically flat soda lime glass substrates are prepared by a three stage co-evaporation process. Energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy in conjunction with atomic force microscopic technique and scanning electron microscopic technique are used, respectively, for compositional and surface morphological analysis of the films. X-ray diffraction (XRD) data on the films are analysed to estimate the influence of antimony doping and indium replacement by gallium, on the structure of the films, by determining the anion–cation bond lengths and anion displacement in the thin films. The obvious dependence of band gap on the composition of the films establishes the possibility of band gap tailoring of the films. Low temperature optical absorbance measurements in the temperature regime 90–301 K are used for investigating the effect of doping on the temperature coefficient of band gaps of the films. Rutherford scattering spectra quantify the thickness of the films for conductivity (σ) measurements. The films exhibit n-type conductivity with two linear regions in the ln(σ) versus temperature inverse graphs, which indicate a defect activated conduction and intrinsic conduction, respectively, in the near room temperature and high temperature regions.
@article{ jacob_structural_2014,
title = {Structural, optical and electrical properties of Sb doped and undoped {AgIn}1 − {xGaxSe}2 and Ag({InGa})5Se8 thin films},
volume = {211},
copyright = {© 2014 {WILEY}-{VCH} Verlag {GmbH} \& Co. {KGaA}, Weinheim},
issn = {1862-6319},
url = {http://0-onlinelibrary.wiley.com.lib.hope.edu/doi/10.1002/pssa.201330370/abstract},
doi = {10.1002/pssa.201330370},
abstract = {Antimony doped and undoped nanostructured thin films of {AgIn}1 − {xGaxSe}2 and Ag({InGa})5Se8 on optically flat soda lime glass substrates are prepared by a three stage co-evaporation process. Energy dispersive analysis of X-rays ({EDAX}) and X-ray photoelectron spectroscopy in conjunction with atomic force microscopic technique and scanning electron microscopic technique are used, respectively, for compositional and surface morphological analysis of the films. X-ray diffraction ({XRD}) data on the films are analysed to estimate the influence of antimony doping and indium replacement by gallium, on the structure of the films, by determining the anion–cation bond lengths and anion displacement in the thin films. The obvious dependence of band gap on the composition of the films establishes the possibility of band gap tailoring of the films. Low temperature optical absorbance measurements in the temperature regime 90–301 K are used for investigating the effect of doping on the temperature coefficient of band gaps of the films. Rutherford scattering spectra quantify the thickness of the films for conductivity (σ) measurements. The films exhibit n-type conductivity with two linear regions in the ln(σ) versus temperature inverse graphs, which indicate a defect activated conduction and intrinsic conduction, respectively, in the near room temperature and high temperature regions.},
language = {en},
number = {3},
urldate = {2014-08-06TZ},
journal = {physica status solidi (a)},
author = {Jacob, Rajani and Remillard, Stephen K. and DeYoung, Paul A. and Deshpande, Uday P. and Shripathi, T. and Ganesan, V. and Naduvath, Johns and Sreenivasan, P. V. and Philip, Rachel Reena},
month = {March},
year = {2014},
keywords = {Thin films, conductivity, optical properties, ordered vacancy compound},
pages = {714--722}
}
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{"_id":{"_str":"53e29909563c19c21b0003dd"},"__v":0,"authorIDs":[],"author_short":["Jacob, R.","Remillard, S.<nbsp>K.","DeYoung, P.<nbsp>A.","Deshpande, U.<nbsp>P.","Shripathi, T.","Ganesan, V.","Naduvath, J.","Sreenivasan, P.<nbsp>V.","Philip","Reena, R."],"bibbaseid":"jacob-remillard-deyoung-deshpande-shripathi-ganesan-naduvath-sreenivasan-philip-reena-structuralopticalandelectricalpropertiesofsbdopedandundopedagin1xgaxse2andaginga5se8thinfilms-2014","bibdata":{"abstract":"Antimony doped and undoped nanostructured thin films of AgIn1 − xGaxSe2 and Ag(InGa)5Se8 on optically flat soda lime glass substrates are prepared by a three stage co-evaporation process. Energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy in conjunction with atomic force microscopic technique and scanning electron microscopic technique are used, respectively, for compositional and surface morphological analysis of the films. X-ray diffraction (XRD) data on the films are analysed to estimate the influence of antimony doping and indium replacement by gallium, on the structure of the films, by determining the anion–cation bond lengths and anion displacement in the thin films. The obvious dependence of band gap on the composition of the films establishes the possibility of band gap tailoring of the films. Low temperature optical absorbance measurements in the temperature regime 90–301 K are used for investigating the effect of doping on the temperature coefficient of band gaps of the films. Rutherford scattering spectra quantify the thickness of the films for conductivity (σ) measurements. The films exhibit n-type conductivity with two linear regions in the ln(σ) versus temperature inverse graphs, which indicate a defect activated conduction and intrinsic conduction, respectively, in the near room temperature and high temperature regions.","author":["Jacob, Rajani","Remillard, Stephen K.","DeYoung, Paul A.","Deshpande, Uday P.","Shripathi, T.","Ganesan, V.","Naduvath, Johns","Sreenivasan, P. V.","Philip","Reena, Rachel"],"author_short":["Jacob, R.","Remillard, S.<nbsp>K.","DeYoung, P.<nbsp>A.","Deshpande, U.<nbsp>P.","Shripathi, T.","Ganesan, V.","Naduvath, J.","Sreenivasan, P.<nbsp>V.","Philip","Reena, R."],"bibtex":"@article{ jacob_structural_2014,\n title = {Structural, optical and electrical properties of Sb doped and undoped {AgIn}1 − {xGaxSe}2 and Ag({InGa})5Se8 thin films},\n volume = {211},\n copyright = {© 2014 {WILEY}-{VCH} Verlag {GmbH} \\& Co. {KGaA}, Weinheim},\n issn = {1862-6319},\n url = {http://0-onlinelibrary.wiley.com.lib.hope.edu/doi/10.1002/pssa.201330370/abstract},\n doi = {10.1002/pssa.201330370},\n abstract = {Antimony doped and undoped nanostructured thin films of {AgIn}1 − {xGaxSe}2 and Ag({InGa})5Se8 on optically flat soda lime glass substrates are prepared by a three stage co-evaporation process. Energy dispersive analysis of X-rays ({EDAX}) and X-ray photoelectron spectroscopy in conjunction with atomic force microscopic technique and scanning electron microscopic technique are used, respectively, for compositional and surface morphological analysis of the films. X-ray diffraction ({XRD}) data on the films are analysed to estimate the influence of antimony doping and indium replacement by gallium, on the structure of the films, by determining the anion–cation bond lengths and anion displacement in the thin films. The obvious dependence of band gap on the composition of the films establishes the possibility of band gap tailoring of the films. Low temperature optical absorbance measurements in the temperature regime 90–301 K are used for investigating the effect of doping on the temperature coefficient of band gaps of the films. Rutherford scattering spectra quantify the thickness of the films for conductivity (σ) measurements. The films exhibit n-type conductivity with two linear regions in the ln(σ) versus temperature inverse graphs, which indicate a defect activated conduction and intrinsic conduction, respectively, in the near room temperature and high temperature regions.},\n language = {en},\n number = {3},\n urldate = {2014-08-06TZ},\n journal = {physica status solidi (a)},\n author = {Jacob, Rajani and Remillard, Stephen K. and DeYoung, Paul A. and Deshpande, Uday P. and Shripathi, T. and Ganesan, V. and Naduvath, Johns and Sreenivasan, P. V. and Philip, Rachel Reena},\n month = {March},\n year = {2014},\n keywords = {Thin films, conductivity, optical properties, ordered vacancy compound},\n pages = {714--722}\n}","bibtype":"article","copyright":"© 2014 WILEY-VCH Verlag GmbH \\& Co. KGaA, Weinheim","doi":"10.1002/pssa.201330370","id":"jacob_structural_2014","issn":"1862-6319","journal":"physica status solidi (a)","key":"jacob_structural_2014","keywords":"Thin films, conductivity, optical properties, ordered vacancy compound","language":"en","month":"March","number":"3","pages":"714--722","title":"Structural, optical and electrical properties of Sb doped and undoped AgIn1 − xGaxSe2 and Ag(InGa)5Se8 thin films","type":"article","url":"http://0-onlinelibrary.wiley.com.lib.hope.edu/doi/10.1002/pssa.201330370/abstract","urldate":"2014-08-06TZ","volume":"211","year":"2014","bibbaseid":"jacob-remillard-deyoung-deshpande-shripathi-ganesan-naduvath-sreenivasan-philip-reena-structuralopticalandelectricalpropertiesofsbdopedandundopedagin1xgaxse2andaginga5se8thinfilms-2014","role":"author","urls":{"Paper":"http://0-onlinelibrary.wiley.com.lib.hope.edu/doi/10.1002/pssa.201330370/abstract"},"keyword":["Thin films","conductivity","optical properties","ordered vacancy compound"],"downloads":0,"html":""},"bibtype":"article","biburl":"http://bibbase.org/zotero/bnhagen","creationDate":"2014-08-06T21:07:21.234Z","downloads":0,"keywords":["thin films","conductivity","optical properties","ordered vacancy compound"],"search_terms":["structural","optical","electrical","properties","doped","undoped","agin1","xgaxse2","inga","5se8","thin","films","jacob","remillard","deyoung","deshpande","shripathi","ganesan","naduvath","sreenivasan","philip","reena"],"title":"Structural, optical and electrical properties of Sb doped and undoped AgIn1 − xGaxSe2 and Ag(InGa)5Se8 thin films","year":2014,"dataSources":["XbqwmNHvyRQLqSqJS"]}