@article{jacobson_active_2011,
	title = {Active {Oxidation} of {SiC}},
	volume = {75},
	issn = {1573-4889},
	doi = {10.1007/s11085-010-9216-4},
	abstract = {Silicon carbide (SiC) forms a protective condensed-phase oxide (SiO2) in passive oxidation and a volatile sub-oxide (SiO(g)) in active oxidation. The transition between these two modes of oxidation and the rates of active oxidation are critical issues. A literature review indicates that impurity effects, the difference between active-to-passive and passive-to-active transitions, and the effect of total pressure on these transitions remain unexplored for SiC. Measurements were made in a thermogravimetric apparatus (TGA) by changing oxygen potentials either by blending O2/Ar mixtures or changing total pressures in a pure oxygen gas stream to the point where a transition occurs. Specimens were examined with standard optical and electron-optical techniques. Active-to-passive and passive-to-active transitions were measured and found to be similar for SiC, which is in contrast to pure Si. The similarity in SiC is attributed to SiC/SiO2 interfacial reactions producing the necessary conditions for passive scale formation (active-to-passive) or passive scale breakdown (passive-to-active). Comparable results were obtained in both the O2/Ar and reduced total O2 pressure cases for SiC.},
	language = {en},
	number = {1},
	urldate = {2023-10-26},
	journal = {Oxidation of Metals},
	author = {Jacobson, N. S. and Myers, D. L.},
	month = feb,
	year = {2011},
	keywords = {Active oxidation, Ceramics, Silicon carbide},
	pages = {1--25},
}

{"_id":"q3A2AK5J96eNoYMFW","bibbaseid":"jacobson-myers-activeoxidationofsic-2011","author_short":["Jacobson, N. S.","Myers, D. L."],"bibdata":{"bibtype":"article","type":"article","title":"Active Oxidation of SiC","volume":"75","issn":"1573-4889","doi":"10.1007/s11085-010-9216-4","abstract":"Silicon carbide (SiC) forms a protective condensed-phase oxide (SiO2) in passive oxidation and a volatile sub-oxide (SiO(g)) in active oxidation. The transition between these two modes of oxidation and the rates of active oxidation are critical issues. A literature review indicates that impurity effects, the difference between active-to-passive and passive-to-active transitions, and the effect of total pressure on these transitions remain unexplored for SiC. Measurements were made in a thermogravimetric apparatus (TGA) by changing oxygen potentials either by blending O2/Ar mixtures or changing total pressures in a pure oxygen gas stream to the point where a transition occurs. Specimens were examined with standard optical and electron-optical techniques. Active-to-passive and passive-to-active transitions were measured and found to be similar for SiC, which is in contrast to pure Si. The similarity in SiC is attributed to SiC/SiO2 interfacial reactions producing the necessary conditions for passive scale formation (active-to-passive) or passive scale breakdown (passive-to-active). Comparable results were obtained in both the O2/Ar and reduced total O2 pressure cases for SiC.","language":"en","number":"1","urldate":"2023-10-26","journal":"Oxidation of Metals","author":[{"propositions":[],"lastnames":["Jacobson"],"firstnames":["N.","S."],"suffixes":[]},{"propositions":[],"lastnames":["Myers"],"firstnames":["D.","L."],"suffixes":[]}],"month":"February","year":"2011","keywords":"Active oxidation, Ceramics, Silicon carbide","pages":"1–25","bibtex":"@article{jacobson_active_2011,\n\ttitle = {Active {Oxidation} of {SiC}},\n\tvolume = {75},\n\tissn = {1573-4889},\n\tdoi = {10.1007/s11085-010-9216-4},\n\tabstract = {Silicon carbide (SiC) forms a protective condensed-phase oxide (SiO2) in passive oxidation and a volatile sub-oxide (SiO(g)) in active oxidation. The transition between these two modes of oxidation and the rates of active oxidation are critical issues. A literature review indicates that impurity effects, the difference between active-to-passive and passive-to-active transitions, and the effect of total pressure on these transitions remain unexplored for SiC. Measurements were made in a thermogravimetric apparatus (TGA) by changing oxygen potentials either by blending O2/Ar mixtures or changing total pressures in a pure oxygen gas stream to the point where a transition occurs. Specimens were examined with standard optical and electron-optical techniques. Active-to-passive and passive-to-active transitions were measured and found to be similar for SiC, which is in contrast to pure Si. The similarity in SiC is attributed to SiC/SiO2 interfacial reactions producing the necessary conditions for passive scale formation (active-to-passive) or passive scale breakdown (passive-to-active). Comparable results were obtained in both the O2/Ar and reduced total O2 pressure cases for SiC.},\n\tlanguage = {en},\n\tnumber = {1},\n\turldate = {2023-10-26},\n\tjournal = {Oxidation of Metals},\n\tauthor = {Jacobson, N. S. and Myers, D. L.},\n\tmonth = feb,\n\tyear = {2011},\n\tkeywords = {Active oxidation, Ceramics, Silicon carbide},\n\tpages = {1--25},\n}\n\n\n\n","author_short":["Jacobson, N. S.","Myers, D. L."],"key":"jacobson_active_2011","id":"jacobson_active_2011","bibbaseid":"jacobson-myers-activeoxidationofsic-2011","role":"author","urls":{},"keyword":["Active oxidation","Ceramics","Silicon carbide"],"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://bibbase.org/zotero-group/khanquist/4882481","dataSources":["qwkM8ZucCwtxbnXfc"],"keywords":["active oxidation","ceramics","silicon carbide"],"search_terms":["active","oxidation","sic","jacobson","myers"],"title":"Active Oxidation of SiC","year":2011}