@article{
 title = {Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimentally Verified Simulation Study},
 type = {article},
 year = {2020},
 keywords = {mobility,organic thin-film transistor,semiconductor thickness},
 volume = {54},
 id = {08a3e3b0-6454-30a7-8965-9818821a99b2},
 created = {2020-11-07T23:59:00.000Z},
 file_attached = {false},
 profile_id = {11ae403c-c558-3358-87f9-dadc957bb57d},
 last_modified = {2020-11-11T21:06:54.606Z},
 read = {false},
 starred = {false},
 authored = {true},
 confirmed = {false},
 hidden = {false},
 private_publication = {false},
 abstract = {© 2020, Pleiades Publishing, Ltd. Abstract: Physics-based two-dimensional numerical simulations are performed to analyze the device characteristics of tri-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistor (OTFT) fabricated using drop-casting technique. Further, using simulation technique enabling calibration this paper also presents the systematic study of the impact of active layer (TIPS-pentacene) thickness on device characteristics. The extracted parameters such as electric field intensity, current density, current On/Off ratio, and mobility exhibit variation with scaling down in active layer thickness from 500 to 100 nm. The study also revealed that Off current and On/Off current ratio (IOn/IOff) is highly dependent on the thickness of the semiconductor layer. Furthermore, the highest value of IOn/IOff is obtained at 100-nm thickness of TIPS-pentacene, which can be used for various fast-switching applications in digital circuits. Simulated results are not only reasonably matching with experimental results but also provide insight on charge transportation at the semiconductor-dielectric interface and in the bulk of TIPS-pentacene layer.},
 bibtype = {article},
 author = {Jain, S.K. and Joshi, A.M. and Bharti, D.},
 doi = {10.1134/S106378262011010X},
 journal = {Semiconductors},
 number = {11}
}

{"_id":"BCMFSE6ai3dS8Rpvi","bibbaseid":"jain-joshi-bharti-performanceinvestigationoforganicthinfilmtransistoronvaryingthicknessofsemiconductormaterialanexperimentallyverifiedsimulationstudy-2020","author_short":["Jain, S.","Joshi, A.","Bharti, D."],"bibdata":{"title":"Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimentally Verified Simulation Study","type":"article","year":"2020","keywords":"mobility,organic thin-film transistor,semiconductor thickness","volume":"54","id":"08a3e3b0-6454-30a7-8965-9818821a99b2","created":"2020-11-07T23:59:00.000Z","file_attached":false,"profile_id":"11ae403c-c558-3358-87f9-dadc957bb57d","last_modified":"2020-11-11T21:06:54.606Z","read":false,"starred":false,"authored":"true","confirmed":false,"hidden":false,"private_publication":false,"abstract":"© 2020, Pleiades Publishing, Ltd. Abstract: Physics-based two-dimensional numerical simulations are performed to analyze the device characteristics of tri-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistor (OTFT) fabricated using drop-casting technique. Further, using simulation technique enabling calibration this paper also presents the systematic study of the impact of active layer (TIPS-pentacene) thickness on device characteristics. The extracted parameters such as electric field intensity, current density, current On/Off ratio, and mobility exhibit variation with scaling down in active layer thickness from 500 to 100 nm. The study also revealed that Off current and On/Off current ratio (IOn/IOff) is highly dependent on the thickness of the semiconductor layer. Furthermore, the highest value of IOn/IOff is obtained at 100-nm thickness of TIPS-pentacene, which can be used for various fast-switching applications in digital circuits. Simulated results are not only reasonably matching with experimental results but also provide insight on charge transportation at the semiconductor-dielectric interface and in the bulk of TIPS-pentacene layer.","bibtype":"article","author":"Jain, S.K. and Joshi, A.M. and Bharti, D.","doi":"10.1134/S106378262011010X","journal":"Semiconductors","number":"11","bibtex":"@article{\n title = {Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimentally Verified Simulation Study},\n type = {article},\n year = {2020},\n keywords = {mobility,organic thin-film transistor,semiconductor thickness},\n volume = {54},\n id = {08a3e3b0-6454-30a7-8965-9818821a99b2},\n created = {2020-11-07T23:59:00.000Z},\n file_attached = {false},\n profile_id = {11ae403c-c558-3358-87f9-dadc957bb57d},\n last_modified = {2020-11-11T21:06:54.606Z},\n read = {false},\n starred = {false},\n authored = {true},\n confirmed = {false},\n hidden = {false},\n private_publication = {false},\n abstract = {© 2020, Pleiades Publishing, Ltd. Abstract: Physics-based two-dimensional numerical simulations are performed to analyze the device characteristics of tri-isopropylsilylethynyl (TIPS)-pentacene organic thin-film transistor (OTFT) fabricated using drop-casting technique. Further, using simulation technique enabling calibration this paper also presents the systematic study of the impact of active layer (TIPS-pentacene) thickness on device characteristics. The extracted parameters such as electric field intensity, current density, current On/Off ratio, and mobility exhibit variation with scaling down in active layer thickness from 500 to 100 nm. The study also revealed that Off current and On/Off current ratio (IOn/IOff) is highly dependent on the thickness of the semiconductor layer. Furthermore, the highest value of IOn/IOff is obtained at 100-nm thickness of TIPS-pentacene, which can be used for various fast-switching applications in digital circuits. Simulated results are not only reasonably matching with experimental results but also provide insight on charge transportation at the semiconductor-dielectric interface and in the bulk of TIPS-pentacene layer.},\n bibtype = {article},\n author = {Jain, S.K. and Joshi, A.M. and Bharti, D.},\n doi = {10.1134/S106378262011010X},\n journal = {Semiconductors},\n number = {11}\n}","author_short":["Jain, S.","Joshi, A.","Bharti, D."],"biburl":"https://bibbase.org/service/mendeley/11ae403c-c558-3358-87f9-dadc957bb57d","bibbaseid":"jain-joshi-bharti-performanceinvestigationoforganicthinfilmtransistoronvaryingthicknessofsemiconductormaterialanexperimentallyverifiedsimulationstudy-2020","role":"author","urls":{},"keyword":["mobility","organic thin-film transistor","semiconductor thickness"],"metadata":{"authorlinks":{}},"downloads":0},"bibtype":"article","biburl":"https://bibbase.org/service/mendeley/11ae403c-c558-3358-87f9-dadc957bb57d","dataSources":["2252seNhipfTmjEBQ"],"keywords":["mobility","organic thin-film transistor","semiconductor thickness"],"search_terms":["performance","investigation","organic","thin","film","transistor","varying","thickness","semiconductor","material","experimentally","verified","simulation","study","jain","joshi","bharti"],"title":"Performance Investigation of Organic Thin Film Transistor on Varying Thickness of Semiconductor Material: An Experimentally Verified Simulation Study","year":2020}