A Fully-Integrated 71 nW CMOS Temperature Sensor for Low Power Wireless Sensor Nodes. Jeong, S., Foo, Z., Lee, Y., Sim, J., Blaauw, D., & Sylvester, D. IEEE Journal of Solid-State Circuits, 49(8):1682–1693, August, 2014.
doi  abstract   bibtex   
We propose a fully-integrated temperature sensor for battery-operated, ultra-low power microsystems. Sensor operation is based on temperature independent/dependent current sources that are used with oscillators and counters to generate a digital temperature code. A conventional approach to generate these currents is to drop a temperature sensitive voltage across a resistor. Since a large resistance is required to achieve nWs of power consumption with typical voltage levels (100 s of mV to 1 V), we introduce a new sensing element that outputs only 75 mV to save both power and area. The sensor is implemented in 0.18 μm CMOS and occupies 0.09 mm 2 while consuming 71 nW. After 2-point calibration, an inaccuracy of + 1.5°C/-1.4°C is achieved across 0 °C to 100 °C. With a conversion time of 30 ms, 0.3 °C (rms) resolution is achieved. The sensor does not require any external references and consumes 2.2 nJ per conversion. The sensor is integrated into a wireless sensor node to demonstrate its operation at a system level.
@article{jeong_fully-integrated_2014,
	title = {A {Fully}-{Integrated} 71 {nW} {CMOS} {Temperature} {Sensor} for {Low} {Power} {Wireless} {Sensor} {Nodes}},
	volume = {49},
	issn = {0018-9200},
	doi = {10.1109/JSSC.2014.2325574},
	abstract = {We propose a fully-integrated temperature sensor for battery-operated, ultra-low power microsystems. Sensor operation is based on temperature independent/dependent current sources that are used with oscillators and counters to generate a digital temperature code. A conventional approach to generate these currents is to drop a temperature sensitive voltage across a resistor. Since a large resistance is required to achieve nWs of power consumption with typical voltage levels (100 s of mV to 1 V), we introduce a new sensing element that outputs only 75 mV to save both power and area. The sensor is implemented in 0.18 μm CMOS and occupies 0.09 mm 2 while consuming 71 nW. After 2-point calibration, an inaccuracy of + 1.5°C/-1.4°C is achieved across 0 °C to 100 °C. With a conversion time of 30 ms, 0.3 °C (rms) resolution is achieved. The sensor does not require any external references and consumes 2.2 nJ per conversion. The sensor is integrated into a wireless sensor node to demonstrate its operation at a system level.},
	number = {8},
	journal = {IEEE Journal of Solid-State Circuits},
	author = {Jeong, Seokhyeon and Foo, Zhiyoong and Lee, Yoonmyung and Sim, Jae-Yoon and Blaauw, D. and Sylvester, D.},
	month = aug,
	year = {2014},
	keywords = {Important},
	pages = {1682--1693}
}

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