Diffusion of Ag adatom on the H-terminated and clean Si(111) surfaces: A first-principles study. Jeong, H. & Jeong, S. Physical Review B (Condensed Matter and Materials Physics), 71(3):035310–7, 2005.
Diffusion of Ag adatom on the H-terminated and clean Si(111) surfaces: A first-principles study [link]Paper  doi  bibtex   
@article{jeong_diffusion_2005,
	title = {Diffusion of {Ag} adatom on the {H}-terminated and clean {Si}(111) surfaces: {A} first-principles study},
	volume = {71},
	shorttitle = {Diffusion of {Ag} adatom on the {H}-terminated and clean {Si}(111) surfaces},
	url = {http://link.aps.org/abstract/PRB/v71/e035310},
	doi = {10.1103/PhysRevB.71.035310},
	number = {3},
	urldate = {2008-09-18},
	journal = {Physical Review B (Condensed Matter and Materials Physics)},
	author = {Jeong, Hojin and Jeong, Sukmin},
	year = {2005},
	keywords = {ab initio calculations, adsorbed layers, adsorption, diffusion barriers, elemental semiconductors, silicon, silver, surface diffusion, surface structure, wetting},
	pages = {035310--7},
}

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