@article{Jiang2018a,
abstract = {Single crystal cubic phase silicon carbide (3C-SiC) films on Si were implanted to 9.6 × 1016 25Mg+/cm2at 673 K and annealed at 1073 and 1573 K for 2, 6, and 12 h in an Ar environment. The data from scanning transmission election microscopy (STEM) and electron energy loss spectroscopy (EELS) mapping suggest a possible formation of unidirectionally aligned tetrahedral precipitates of core (MgC2)-shell (Mg2Si) in the implanted sample annealed at 1573 K for 12 h. There are also small spherical voids near the surface and larger faceted voids around the region of maximum vacancy concentration. Atom probe tomography confirms25Mg segregation dominated by small atomic clusters with local25Mg concentrations up to 85 at.{\%}. The resulting precipitate size and number density are found to decrease and increase, respectively, probably as a result of the thermal annealing that decomposes the25Mg-bearing precipitates at the elevated temperatures and subsequent nucleation and growth below 1073 K during the cooling stage. The results from this study provide data needed to fully understand the property degradation of SiC in a high-flux fast neutron environment.},
author = {Jiang, Weilin and Spurgeon, Steven R. and Liu, Jia and Schreiber, Daniel K. and Jung, Hee Joon and Devaraj, Arun and Edwards, Danny J. and Henager, Charles H. and Kurtz, Richard J. and Wang, Yongqiang},
doi = {10.1016/j.jnucmat.2017.10.046},
file = {:Users/spur391/Google Drive/Literature/Jiang et al/Journal of Nuclear Materials/Jiang et al. - 2018 - Precipitates and voids in cubic silicon carbide implanted with 25 Mg ions.pdf:pdf},
issn = {00223115},
journal = {Journal of Nuclear Materials},
month = {jan},
pages = {321--331},
publisher = {Elsevier B.V.},
title = {{Precipitates and voids in cubic silicon carbide implanted with 25 Mg + ions}},
url = {https://doi.org/10.1016/j.jnucmat.2017.10.046 http://linkinghub.elsevier.com/retrieve/pii/S0022311517304737},
volume = {498},
year = {2018}
}

{"_id":"3ueaiRSju2BCj4Yzy","bibbaseid":"jiang-spurgeon-liu-schreiber-jung-devaraj-edwards-henager-etal-precipitatesandvoidsincubicsiliconcarbideimplantedwith25mgions-2018","authorIDs":[],"author_short":["Jiang, W.","Spurgeon, S. R.","Liu, J.","Schreiber, D. K.","Jung, H. J.","Devaraj, A.","Edwards, D. J.","Henager, C. H.","Kurtz, R. J.","Wang, Y."],"bibdata":{"bibtype":"article","type":"article","abstract":"Single crystal cubic phase silicon carbide (3C-SiC) films on Si were implanted to 9.6 × 1016 25Mg+/cm2at 673 K and annealed at 1073 and 1573 K for 2, 6, and 12 h in an Ar environment. The data from scanning transmission election microscopy (STEM) and electron energy loss spectroscopy (EELS) mapping suggest a possible formation of unidirectionally aligned tetrahedral precipitates of core (MgC2)-shell (Mg2Si) in the implanted sample annealed at 1573 K for 12 h. There are also small spherical voids near the surface and larger faceted voids around the region of maximum vacancy concentration. Atom probe tomography confirms25Mg segregation dominated by small atomic clusters with local25Mg concentrations up to 85 at.%. The resulting precipitate size and number density are found to decrease and increase, respectively, probably as a result of the thermal annealing that decomposes the25Mg-bearing precipitates at the elevated temperatures and subsequent nucleation and growth below 1073 K during the cooling stage. The results from this study provide data needed to fully understand the property degradation of SiC in a high-flux fast neutron environment.","author":[{"propositions":[],"lastnames":["Jiang"],"firstnames":["Weilin"],"suffixes":[]},{"propositions":[],"lastnames":["Spurgeon"],"firstnames":["Steven","R."],"suffixes":[]},{"propositions":[],"lastnames":["Liu"],"firstnames":["Jia"],"suffixes":[]},{"propositions":[],"lastnames":["Schreiber"],"firstnames":["Daniel","K."],"suffixes":[]},{"propositions":[],"lastnames":["Jung"],"firstnames":["Hee","Joon"],"suffixes":[]},{"propositions":[],"lastnames":["Devaraj"],"firstnames":["Arun"],"suffixes":[]},{"propositions":[],"lastnames":["Edwards"],"firstnames":["Danny","J."],"suffixes":[]},{"propositions":[],"lastnames":["Henager"],"firstnames":["Charles","H."],"suffixes":[]},{"propositions":[],"lastnames":["Kurtz"],"firstnames":["Richard","J."],"suffixes":[]},{"propositions":[],"lastnames":["Wang"],"firstnames":["Yongqiang"],"suffixes":[]}],"doi":"10.1016/j.jnucmat.2017.10.046","file":":Users/spur391/Google Drive/Literature/Jiang et al/Journal of Nuclear Materials/Jiang et al. - 2018 - Precipitates and voids in cubic silicon carbide implanted with 25 Mg ions.pdf:pdf","issn":"00223115","journal":"Journal of Nuclear Materials","month":"jan","pages":"321–331","publisher":"Elsevier B.V.","title":"Precipitates and voids in cubic silicon carbide implanted with 25 Mg + ions","url":"https://doi.org/10.1016/j.jnucmat.2017.10.046 http://linkinghub.elsevier.com/retrieve/pii/S0022311517304737","volume":"498","year":"2018","bibtex":"@article{Jiang2018a,\nabstract = {Single crystal cubic phase silicon carbide (3C-SiC) films on Si were implanted to 9.6 × 1016 25Mg+/cm2at 673 K and annealed at 1073 and 1573 K for 2, 6, and 12 h in an Ar environment. The data from scanning transmission election microscopy (STEM) and electron energy loss spectroscopy (EELS) mapping suggest a possible formation of unidirectionally aligned tetrahedral precipitates of core (MgC2)-shell (Mg2Si) in the implanted sample annealed at 1573 K for 12 h. There are also small spherical voids near the surface and larger faceted voids around the region of maximum vacancy concentration. Atom probe tomography confirms25Mg segregation dominated by small atomic clusters with local25Mg concentrations up to 85 at.{\\%}. The resulting precipitate size and number density are found to decrease and increase, respectively, probably as a result of the thermal annealing that decomposes the25Mg-bearing precipitates at the elevated temperatures and subsequent nucleation and growth below 1073 K during the cooling stage. The results from this study provide data needed to fully understand the property degradation of SiC in a high-flux fast neutron environment.},\nauthor = {Jiang, Weilin and Spurgeon, Steven R. and Liu, Jia and Schreiber, Daniel K. and Jung, Hee Joon and Devaraj, Arun and Edwards, Danny J. and Henager, Charles H. and Kurtz, Richard J. and Wang, Yongqiang},\ndoi = {10.1016/j.jnucmat.2017.10.046},\nfile = {:Users/spur391/Google Drive/Literature/Jiang et al/Journal of Nuclear Materials/Jiang et al. - 2018 - Precipitates and voids in cubic silicon carbide implanted with 25 Mg ions.pdf:pdf},\nissn = {00223115},\njournal = {Journal of Nuclear Materials},\nmonth = {jan},\npages = {321--331},\npublisher = {Elsevier B.V.},\ntitle = {{Precipitates and voids in cubic silicon carbide implanted with 25 Mg + ions}},\nurl = {https://doi.org/10.1016/j.jnucmat.2017.10.046 http://linkinghub.elsevier.com/retrieve/pii/S0022311517304737},\nvolume = {498},\nyear = {2018}\n}\n","author_short":["Jiang, W.","Spurgeon, S. 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