Non-equilibrium quantum theory for nanodevices based on the Feynman–Vernon influence functional. Jin, J., Tu, M. W., Zhang, W., & Yan, Y. New Journal of Physics, 12(8):083013, August, 2010.
Non-equilibrium quantum theory for nanodevices based on the Feynman–Vernon influence functional [link]Paper  doi  abstract   bibtex   
In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman–Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.
@article{jin_non-equilibrium_2010,
	title = {Non-equilibrium quantum theory for nanodevices based on the {Feynman}–{Vernon} influence functional},
	volume = {12},
	issn = {1367-2630},
	url = {http://iopscience.iop.org/1367-2630/12/8/083013},
	doi = {10.1088/1367-2630/12/8/083013},
	abstract = {In this paper, we present a non-equilibrium quantum theory for transient electron dynamics in nanodevices based on the Feynman–Vernon influence functional. Applying the exact master equation for nanodevices we recently developed to the more general case in which all the constituents of a device vary in time in response to time-dependent external voltages, we obtained non-perturbatively the transient quantum transport theory in terms of the reduced density matrix. The theory enables us to study transient quantum transport in nanostructures with back-reaction effects from the contacts, with non-Markovian dissipation and decoherence being fully taken into account. For a simple illustration, we apply the theory to a single-electron transistor subjected to ac bias voltages. The non-Markovian memory structure and the nonlinear response functions describing transient electron transport are obtained.},
	language = {en},
	number = {8},
	urldate = {2014-11-25},
	journal = {New Journal of Physics},
	author = {Jin, Jinshuang and Tu, Matisse Wei-Yuan and Zhang, Wei-Min and Yan, YiJing},
	month = aug,
	year = {2010},
	pages = {083013}
}
Downloads: 0