High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition. Kaidashev, E. M., Lorenz, M., von Wenckstern, H., Rahm, A., Semmelhack, H., Han, K., Benndorf, G., Bundesmann, C., Hochmuth, H., & Grundmann, M. Applied Physics Letters, 82(22):3901–3903, May, 2003. Paper doi abstract bibtex A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.
@article{kaidashev_high_2003,
title = {High electron mobility of epitaxial {ZnO} thin films on c-plane sapphire grown by multistep pulsed-laser deposition},
volume = {82},
issn = {0003-6951},
url = {https://doi.org/10.1063/1.1578694},
doi = {10.1063/1.1578694},
abstract = {A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.},
number = {22},
urldate = {2023-11-11},
journal = {Applied Physics Letters},
author = {Kaidashev, E. M. and Lorenz, M. and von Wenckstern, H. and Rahm, A. and Semmelhack, H.-C. and Han, K.-H. and Benndorf, G. and Bundesmann, C. and Hochmuth, H. and Grundmann, M.},
month = may,
year = {2003},
pages = {3901--3903},
}
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{"_id":"Y3KavcQHa6d48JNqz","bibbaseid":"kaidashev-lorenz-vonwenckstern-rahm-semmelhack-han-benndorf-bundesmann-etal-highelectronmobilityofepitaxialznothinfilmsoncplanesapphiregrownbymultisteppulsedlaserdeposition-2003","author_short":["Kaidashev, E. M.","Lorenz, M.","von Wenckstern, H.","Rahm, A.","Semmelhack, H.","Han, K.","Benndorf, G.","Bundesmann, C.","Hochmuth, H.","Grundmann, M."],"bibdata":{"bibtype":"article","type":"article","title":"High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition","volume":"82","issn":"0003-6951","url":"https://doi.org/10.1063/1.1578694","doi":"10.1063/1.1578694","abstract":"A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.","number":"22","urldate":"2023-11-11","journal":"Applied Physics Letters","author":[{"propositions":[],"lastnames":["Kaidashev"],"firstnames":["E.","M."],"suffixes":[]},{"propositions":[],"lastnames":["Lorenz"],"firstnames":["M."],"suffixes":[]},{"propositions":["von"],"lastnames":["Wenckstern"],"firstnames":["H."],"suffixes":[]},{"propositions":[],"lastnames":["Rahm"],"firstnames":["A."],"suffixes":[]},{"propositions":[],"lastnames":["Semmelhack"],"firstnames":["H.-C."],"suffixes":[]},{"propositions":[],"lastnames":["Han"],"firstnames":["K.-H."],"suffixes":[]},{"propositions":[],"lastnames":["Benndorf"],"firstnames":["G."],"suffixes":[]},{"propositions":[],"lastnames":["Bundesmann"],"firstnames":["C."],"suffixes":[]},{"propositions":[],"lastnames":["Hochmuth"],"firstnames":["H."],"suffixes":[]},{"propositions":[],"lastnames":["Grundmann"],"firstnames":["M."],"suffixes":[]}],"month":"May","year":"2003","pages":"3901–3903","bibtex":"@article{kaidashev_high_2003,\n\ttitle = {High electron mobility of epitaxial {ZnO} thin films on c-plane sapphire grown by multistep pulsed-laser deposition},\n\tvolume = {82},\n\tissn = {0003-6951},\n\turl = {https://doi.org/10.1063/1.1578694},\n\tdoi = {10.1063/1.1578694},\n\tabstract = {A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.},\n\tnumber = {22},\n\turldate = {2023-11-11},\n\tjournal = {Applied Physics Letters},\n\tauthor = {Kaidashev, E. M. and Lorenz, M. and von Wenckstern, H. and Rahm, A. and Semmelhack, H.-C. and Han, K.-H. and Benndorf, G. and Bundesmann, C. and Hochmuth, H. and Grundmann, M.},\n\tmonth = may,\n\tyear = {2003},\n\tpages = {3901--3903},\n}\n\n","author_short":["Kaidashev, E. M.","Lorenz, M.","von Wenckstern, H.","Rahm, A.","Semmelhack, H.","Han, K.","Benndorf, G.","Bundesmann, C.","Hochmuth, H.","Grundmann, M."],"key":"kaidashev_high_2003","id":"kaidashev_high_2003","bibbaseid":"kaidashev-lorenz-vonwenckstern-rahm-semmelhack-han-benndorf-bundesmann-etal-highelectronmobilityofepitaxialznothinfilmsoncplanesapphiregrownbymultisteppulsedlaserdeposition-2003","role":"author","urls":{"Paper":"https://doi.org/10.1063/1.1578694"},"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://bibbase.org/f/NkS9m4R3ieFPicBbH/nanokafedra2002-2023.bib","dataSources":["t334MWsk8W74r2QJi","XXMPhKJLn3LzRFzbL","5vfT7chqyKSuztznA","EotKB7sk8uWbfvCNP","3bDLdJJSLMCzwHmsG","prFTW7rEBBSfixaBo"],"keywords":[],"search_terms":["high","electron","mobility","epitaxial","zno","thin","films","plane","sapphire","grown","multistep","pulsed","laser","deposition","kaidashev","lorenz","von wenckstern","rahm","semmelhack","han","benndorf","bundesmann","hochmuth","grundmann"],"title":"High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition","year":2003}