High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition

High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition. Kaidashev, E. M., Lorenz, M., von Wenckstern, H., Rahm, A., Semmelhack, H., Han, K., Benndorf, G., Bundesmann, C., Hochmuth, H., & Grundmann, M. Applied Physics Letters, 82(22):3901–3903, May, 2003.

Paper doi abstract bibtex

A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.

@article{kaidashev_high_2003,
	title = {High electron mobility of epitaxial {ZnO} thin films on c-plane sapphire grown by multistep pulsed-laser deposition},
	volume = {82},
	issn = {0003-6951},
	url = {https://doi.org/10.1063/1.1578694},
	doi = {10.1063/1.1578694},
	abstract = {A multistep pulsed-laser deposition (PLD) process is presented for epitaxial, nominally undoped ZnO thin films of total thickness of 1 to 2 μm on c-plane sapphire substrates. We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.},
	number = {22},
	urldate = {2023-11-11},
	journal = {Applied Physics Letters},
	author = {Kaidashev, E. M. and Lorenz, M. and von Wenckstern, H. and Rahm, A. and Semmelhack, H.-C. and Han, K.-H. and Benndorf, G. and Bundesmann, C. and Hochmuth, H. and Grundmann, M.},
	month = may,
	year = {2003},
	pages = {3901--3903},
}

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We obtain reproducibly high electron mobilities from 115 up to 155 cm2/V s at 300 K in a narrow carrier concentration range from 2 to 5×1016 cm−3. The key issue of the multistep PLD process is the insertion of 30-nm-thin ZnO relaxation layers deposited at reduced substrate temperature. The high-mobility samples show atomically flat surface structure with grain size of about 0.5–1 μm, whereas the surfaces of low-mobility films consist of clearly resolved hexagonally faceted columnar grains of only 200-nm size, as shown by atomic force microscopy. Structurally optimized PLD ZnO thin films show narrow high-resolution x-ray diffraction peak widths of the ZnO(0002) ω- and 2Θ-scans as low as 151 and 43 arcsec, respectively, and narrow photoluminescence linewidths of donor-bound excitons of 1.7 meV at 2 K.},\n\tnumber = {22},\n\turldate = {2023-11-11},\n\tjournal = {Applied Physics Letters},\n\tauthor = {Kaidashev, E. 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