@article{kang_low-temperature_2019,
	title = {Low-temperature synthesis of {GaN} film from aqueous solution by electrodeposition},
	volume = {49},
	issn = {0021-891X, 1572-8838},
	url = {http://link.springer.com/10.1007/s10800-019-01327-w},
	doi = {10.1007/s10800-019-01327-w},
	abstract = {Gallium nitride (GaN) films were synthesized on n-type-Si (111) substrates using a low-cost and low-temperature technique of electrochemical deposition. The electrochemical behavior of ­Ga3+, ­NH4+, and ­NO3− ions in the aqueous solutions used as sources of GaN were confirmed by cyclic voltammetry. The scanning electron microscopy images showed that the films deposited at a current density of 3.5 mA cm−2 or greater have plate-like surface morphologies on the Si substrate. The energy-dispersive X-ray spectroscopy results showed that oxygen, gallium, and nitrogen coexist in these plate-like films. In the X-ray diffraction patterns, the sample synthesized at a current density of 3.5 mA cm−2 for 24 h exhibited peaks of gallium oxide and hexagonal-GaN phase. Photoluminescence analysis revealed a peak at 3.2 eV, which corresponds to the band gap energy of GaN, as well as a broad peak at around 2.5 eV at room temperature.},
	language = {en},
	number = {9},
	urldate = {2022-06-22},
	journal = {Journal of Applied Electrochemistry},
	author = {Kang, Jaewook and Mitsuhashi, Takuaki and Kuroda, Kensuke and Okido, Masazumi},
	month = sep,
	year = {2019},
	pages = {871--881},
}

{"_id":"nPAy2HBsmvwgjL7Qz","bibbaseid":"kang-mitsuhashi-kuroda-okido-lowtemperaturesynthesisofganfilmfromaqueoussolutionbyelectrodeposition-2019","author_short":["Kang, J.","Mitsuhashi, T.","Kuroda, K.","Okido, M."],"bibdata":{"bibtype":"article","type":"article","title":"Low-temperature synthesis of GaN film from aqueous solution by electrodeposition","volume":"49","issn":"0021-891X, 1572-8838","url":"http://link.springer.com/10.1007/s10800-019-01327-w","doi":"10.1007/s10800-019-01327-w","abstract":"Gallium nitride (GaN) films were synthesized on n-type-Si (111) substrates using a low-cost and low-temperature technique of electrochemical deposition. The electrochemical behavior of ­Ga3+, ­NH4+, and ­NO3− ions in the aqueous solutions used as sources of GaN were confirmed by cyclic voltammetry. The scanning electron microscopy images showed that the films deposited at a current density of 3.5 mA cm−2 or greater have plate-like surface morphologies on the Si substrate. The energy-dispersive X-ray spectroscopy results showed that oxygen, gallium, and nitrogen coexist in these plate-like films. In the X-ray diffraction patterns, the sample synthesized at a current density of 3.5 mA cm−2 for 24 h exhibited peaks of gallium oxide and hexagonal-GaN phase. Photoluminescence analysis revealed a peak at 3.2 eV, which corresponds to the band gap energy of GaN, as well as a broad peak at around 2.5 eV at room temperature.","language":"en","number":"9","urldate":"2022-06-22","journal":"Journal of Applied Electrochemistry","author":[{"propositions":[],"lastnames":["Kang"],"firstnames":["Jaewook"],"suffixes":[]},{"propositions":[],"lastnames":["Mitsuhashi"],"firstnames":["Takuaki"],"suffixes":[]},{"propositions":[],"lastnames":["Kuroda"],"firstnames":["Kensuke"],"suffixes":[]},{"propositions":[],"lastnames":["Okido"],"firstnames":["Masazumi"],"suffixes":[]}],"month":"September","year":"2019","pages":"871–881","bibtex":"@article{kang_low-temperature_2019,\n\ttitle = {Low-temperature synthesis of {GaN} film from aqueous solution by electrodeposition},\n\tvolume = {49},\n\tissn = {0021-891X, 1572-8838},\n\turl = {http://link.springer.com/10.1007/s10800-019-01327-w},\n\tdoi = {10.1007/s10800-019-01327-w},\n\tabstract = {Gallium nitride (GaN) films were synthesized on n-type-Si (111) substrates using a low-cost and low-temperature technique of electrochemical deposition. The electrochemical behavior of ­Ga3+, ­NH4+, and ­NO3− ions in the aqueous solutions used as sources of GaN were confirmed by cyclic voltammetry. The scanning electron microscopy images showed that the films deposited at a current density of 3.5 mA cm−2 or greater have plate-like surface morphologies on the Si substrate. The energy-dispersive X-ray spectroscopy results showed that oxygen, gallium, and nitrogen coexist in these plate-like films. In the X-ray diffraction patterns, the sample synthesized at a current density of 3.5 mA cm−2 for 24 h exhibited peaks of gallium oxide and hexagonal-GaN phase. Photoluminescence analysis revealed a peak at 3.2 eV, which corresponds to the band gap energy of GaN, as well as a broad peak at around 2.5 eV at room temperature.},\n\tlanguage = {en},\n\tnumber = {9},\n\turldate = {2022-06-22},\n\tjournal = {Journal of Applied Electrochemistry},\n\tauthor = {Kang, Jaewook and Mitsuhashi, Takuaki and Kuroda, Kensuke and Okido, Masazumi},\n\tmonth = sep,\n\tyear = {2019},\n\tpages = {871--881},\n}\n\n","author_short":["Kang, J.","Mitsuhashi, T.","Kuroda, K.","Okido, M."],"key":"kang_low-temperature_2019","id":"kang_low-temperature_2019","bibbaseid":"kang-mitsuhashi-kuroda-okido-lowtemperaturesynthesisofganfilmfromaqueoussolutionbyelectrodeposition-2019","role":"author","urls":{"Paper":"http://link.springer.com/10.1007/s10800-019-01327-w"},"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/spintextures","dataSources":["rXHvWQJHcL8ctHS4s"],"keywords":[],"search_terms":["low","temperature","synthesis","gan","film","aqueous","solution","electrodeposition","kang","mitsuhashi","kuroda","okido"],"title":"Low-temperature synthesis of GaN film from aqueous solution by electrodeposition","year":2019}