GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy. Kaun, S. W., Ahmadi, E., Mazumder, B., Wu, F., Kyle, E. C., Burke, P. G., Mishra, U. K., & Speck, J. S. Semiconductor Science and Technology, 2014. Publisher: Institute of Physics Publishing
doi  abstract   bibtex   
Metal-polar In0.17Al0.83N barriers, lattice-matched to GaN, were grown under N-rich conditions by plasma-assisted molecular beam epitaxy. The compositional homogeneity of these barriers was confirmed by plan-view high-angle annular dark-field scanning transmission electron microscopy and atom probe tomography. Metal-polar In0.17Al 0.83N/(GaN)/(AlN)/GaN structures were grown with a range of AlN and GaN interlayer (IL) thicknesses to determine the optimal structure for achieving a low two-dimensional electron gas (2DEG) sheet resistance. It was determined that the presence of a GaN IL was necessary to yield a 2DEG sheet density above 2 × 1013 cm-2. By including AlN and GaN ILs with thicknesses of 3 nm and 2 nm, respectively, a metal-polar In 0.17Al0.83N/GaN/AlN/GaN structure regrown on a GaN-on-sapphire template yielded a room temperature (RT) 2DEG sheet resistance of 163 Ω/□. This structure had a threading dislocation density (TDD) of ∼5 × 108 cm-2. Through regrowth on a free-standing GaN template with low TDD (∼5 × 107 cm -2), an optimized metal-polar In0.17Al0.83N/ GaN/AlN/GaN structure achieved a RT 2DEG sheet resistance of 145 Ω/□ and mobility of 1822 cm2 V-1 s-1. High-electron-mobility transistors with output current densities above 1 A mm-1 were also demonstrated on the low-TDD structure. © 2014 IOP Publishing Ltd.
@article{kaun_gan-based_2014,
	title = {{GaN}-based high-electron-mobility transistor structures with homogeneous lattice-matched {InAlN} barriers grown by plasma-assisted molecular beam epitaxy},
	volume = {29},
	issn = {13616641},
	doi = {10.1088/0268-1242/29/4/045011},
	abstract = {Metal-polar In0.17Al0.83N barriers, lattice-matched to GaN, were grown under N-rich conditions by plasma-assisted molecular beam epitaxy. The compositional homogeneity of these barriers was confirmed by plan-view high-angle annular dark-field scanning transmission electron microscopy and atom probe tomography. Metal-polar In0.17Al 0.83N/(GaN)/(AlN)/GaN structures were grown with a range of AlN and GaN interlayer (IL) thicknesses to determine the optimal structure for achieving a low two-dimensional electron gas (2DEG) sheet resistance. It was determined that the presence of a GaN IL was necessary to yield a 2DEG sheet density above 2 × 1013 cm-2. By including AlN and GaN ILs with thicknesses of 3 nm and 2 nm, respectively, a metal-polar In 0.17Al0.83N/GaN/AlN/GaN structure regrown on a GaN-on-sapphire template yielded a room temperature (RT) 2DEG sheet resistance of 163 Ω/□. This structure had a threading dislocation density (TDD) of ∼5 × 108 cm-2. Through regrowth on a free-standing GaN template with low TDD (∼5 × 107 cm -2), an optimized metal-polar In0.17Al0.83N/ GaN/AlN/GaN structure achieved a RT 2DEG sheet resistance of 145 Ω/□ and mobility of 1822 cm2 V-1 s-1. High-electron-mobility transistors with output current densities above 1 A mm-1 were also demonstrated on the low-TDD structure. © 2014 IOP Publishing Ltd.},
	number = {4},
	journal = {Semiconductor Science and Technology},
	author = {Kaun, Stephen W. and Ahmadi, Elaheh and Mazumder, Baishakhi and Wu, Feng and Kyle, Erin C.H. and Burke, Peter G. and Mishra, Umesh K. and Speck, James S.},
	year = {2014},
	note = {Publisher: Institute of Physics Publishing},
	keywords = {GaN, InAlN, MBE, Transistors, scattering},
}

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