Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3/SrRuO3 bilayers. Ke, X; Rzchowski, M.; Belenky, L.; and Eom, C. APPLIED PHYSICS LETTERS, 84(26):5458-5460, JUN 28, 2004.
doi  abstract   bibtex   
Epitaxial La0.67Sr0.33MnO3(LSMO)/SrRuO3(SRO) ferromagnetic bilayers have been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (T-c(SRO)), and its magnitude increases rapidly as the temperature is lowered below T-c(SRO). The direction of the shift is consistent with an antiferromagnetic exchange coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO layer. We propose that atomic layer charge transfer modifies the electronic state at the interface, resulting in the observed antiferromagnetic interfacial exchange coupling. (C) 2004 American Institute Of Physics.
@article{ ISI:000222200600054,
Author = {Ke, X and Rzchowski, MS and Belenky, LJ and Eom, CB},
Title = {{Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3/SrRuO3 bilayers}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{2004}},
Volume = {{84}},
Number = {{26}},
Pages = {{5458-5460}},
Month = {{JUN 28}},
Abstract = {{Epitaxial La0.67Sr0.33MnO3(LSMO)/SrRuO3(SRO) ferromagnetic bilayers have
   been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition
   with atomic layer control. We observe a shift in the magnetic hysteresis
   loop of the LSMO layer in the same direction as the applied biasing
   field (positive exchange bias). The effect is not present above the
   Curie temperature of the SRO layer (T-c(SRO)), and its magnitude
   increases rapidly as the temperature is lowered below T-c(SRO). The
   direction of the shift is consistent with an antiferromagnetic exchange
   coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO
   layer. We propose that atomic layer charge transfer modifies the
   electronic state at the interface, resulting in the observed
   antiferromagnetic interfacial exchange coupling. (C) 2004 American
   Institute Of Physics.}},
DOI = {{10.1063/1.1767955}},
ISSN = {{0003-6951}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:000222200600054}},
}
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