Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3/SrRuO3 bilayers. Ke, X, Rzchowski, M., Belenky, L., & Eom, C. APPLIED PHYSICS LETTERS, 84(26):5458-5460, JUN 28, 2004. doi abstract bibtex Epitaxial La0.67Sr0.33MnO3(LSMO)/SrRuO3(SRO) ferromagnetic bilayers have been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition with atomic layer control. We observe a shift in the magnetic hysteresis loop of the LSMO layer in the same direction as the applied biasing field (positive exchange bias). The effect is not present above the Curie temperature of the SRO layer (T-c(SRO)), and its magnitude increases rapidly as the temperature is lowered below T-c(SRO). The direction of the shift is consistent with an antiferromagnetic exchange coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO layer. We propose that atomic layer charge transfer modifies the electronic state at the interface, resulting in the observed antiferromagnetic interfacial exchange coupling. (C) 2004 American Institute Of Physics.
@article{ ISI:000222200600054,
Author = {Ke, X and Rzchowski, MS and Belenky, LJ and Eom, CB},
Title = {{Positive exchange bias in ferromagnetic La0.67Sr0.33MnO3/SrRuO3 bilayers}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{2004}},
Volume = {{84}},
Number = {{26}},
Pages = {{5458-5460}},
Month = {{JUN 28}},
Abstract = {{Epitaxial La0.67Sr0.33MnO3(LSMO)/SrRuO3(SRO) ferromagnetic bilayers have
been grown on (001)SrTiO3(STO) substrates by pulsed laser deposition
with atomic layer control. We observe a shift in the magnetic hysteresis
loop of the LSMO layer in the same direction as the applied biasing
field (positive exchange bias). The effect is not present above the
Curie temperature of the SRO layer (T-c(SRO)), and its magnitude
increases rapidly as the temperature is lowered below T-c(SRO). The
direction of the shift is consistent with an antiferromagnetic exchange
coupling between the ferromagnetic LSMO layer and the ferromagnetic SRO
layer. We propose that atomic layer charge transfer modifies the
electronic state at the interface, resulting in the observed
antiferromagnetic interfacial exchange coupling. (C) 2004 American
Institute Of Physics.}},
DOI = {{10.1063/1.1767955}},
ISSN = {{0003-6951}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:000222200600054}},
}
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