Recent progress in metal-organic chemical vapor deposition of ${\}left( 000{\}bar\{1\} {\}right)$ N-polar group-III nitrides. Keller, S., Li, H., Laurent, M., Hu, Y., Pfaff, N., Lu, J., Brown, D. F, Fichtenbaum, N. A, Speck, J. S, DenBaars, S. P, & Mishra, U. K Semiconductor Science and Technology, 29(11):113001, November, 2014. ![Recent progress in metal-organic chemical vapor deposition of ${\}left( 000{\}bar\{1\} {\}right)$ N-polar group-III nitrides [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi abstract bibtex Progress in metal-organic chemical vapor deposition of high quality 0001¯ N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation. The high quality of the fabricated films enabled the demonstration of N-polar (Al, Ga, In)N based devices with excellent performance for transistor applications. Challenges related to the growth of high quality N-polar InGaN films are also presented.
@article{keller_recent_2014,
title = {Recent progress in metal-organic chemical vapor deposition of \${\textbackslash}left( 000{\textbackslash}bar\{1\} {\textbackslash}right)\$ {N}-polar group-{III} nitrides},
volume = {29},
issn = {0268-1242, 1361-6641},
url = {https://iopscience.iop.org/article/10.1088/0268-1242/29/11/113001},
doi = {10.1088/0268-1242/29/11/113001},
abstract = {Progress in metal-organic chemical vapor deposition of high quality 0001¯ N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation. The high quality of the fabricated films enabled the demonstration of N-polar (Al, Ga, In)N based devices with excellent performance for transistor applications. Challenges related to the growth of high quality N-polar InGaN films are also presented.},
language = {en},
number = {11},
urldate = {2023-05-18},
journal = {Semiconductor Science and Technology},
author = {Keller, Stacia and Li, Haoran and Laurent, Matthew and Hu, Yanling and Pfaff, Nathan and Lu, Jing and Brown, David F and Fichtenbaum, Nicholas A and Speck, James S and DenBaars, Steven P and Mishra, Umesh K},
month = nov,
year = {2014},
pages = {113001},
}
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