@article{keller_recent_2014,
	title = {Recent progress in metal-organic chemical vapor deposition of  {N}-polar group-{III} nitrides},
	volume = {29},
	doi = {https://doi.org/10.1088/0268-1242/29/11/113001},
	abstract = {Progress in metal-organic chemical vapor deposition of high quality()0001 ̄N-polar (Al, Ga, In)Nfilms on sapphire, silicon carbide and silicon substrates is reviewed with focus on key processcomponents such as utilization of vicinal substrates, conditions ensuring a high surface mobility ofspecies participating in the growth process, and low impurity incorporation. The high quality of thefabricatedfilms enabled the demonstration of N-polar (Al, Ga, In)N based devices with excellentperformance for transistor applications. Challenges related to the growth of high quality N-polarInGaNfilms are also presented.},
	number = {113001},
	journal = {Semiconductor Science and Technology},
	author = {Keller, Stacia and Li, Haoran and Laurent, Matthew and Hu, Yanling and Pfaff, Nathan and Lu, Jing and Brown, David F. and Fichtenbaum, Nicholas A. and Speck, James S. and DenBaars, Steven P. and Mishra, Umesh K.},
	month = aug,
	year = {2014},
	keywords = {AlGaN, GaN, InGaN, N-polar},
}

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