@article{kepenekian_spin_2014,
	title = {Spin transport in dangling-bond wires on doped {H}-passivated {Si}(100)},
	volume = {25},
	issn = {0957-4484},
	url = {http://iopscience.iop.org/0957-4484/25/46/465703},
	doi = {10.1088/0957-4484/25/46/465703},
	abstract = {New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.},
	language = {en},
	number = {46},
	urldate = {2014-10-31},
	journal = {Nanotechnology},
	author = {Kepenekian, Mikaël and Robles, Roberto and Rurali, Riccardo and Lorente, Nicolás},
	month = nov,
	year = {2014},
	keywords = {\_tablet},
	pages = {465703},
}

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