Carrier multiplication in van der Waals layered transition metal dichalcogenides. Kim, J., Bergren, M. R., Park, J. C., Adhikari, S., Lorke, M., Frauenheim, T., Choe, D., Kim, B., Choi, H., Gregorkiewicz, T., & Lee, Y. H. Nature Communications, 10(1):1–9, December, 2019.
Carrier multiplication in van der Waals layered transition metal dichalcogenides [link]Paper  doi  abstract   bibtex   
During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversation efficiency.
@article{kim_carrier_2019,
	title = {Carrier multiplication in van der {Waals} layered transition metal dichalcogenides},
	volume = {10},
	copyright = {2019 The Author(s)},
	issn = {2041-1723},
	url = {https://www.nature.com/articles/s41467-019-13325-9},
	doi = {10.1038/s41467-019-13325-9},
	abstract = {During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99\% conversation efficiency.},
	language = {en},
	number = {1},
	urldate = {2020-06-28},
	journal = {Nature Communications},
	author = {Kim, Ji-Hee and Bergren, Matthew R. and Park, Jin Cheol and Adhikari, Subash and Lorke, Michael and Frauenheim, Thomas and Choe, Duk-Hyun and Kim, Beom and Choi, Hyunyong and Gregorkiewicz, Tom and Lee, Young Hee},
	month = dec,
	year = {2019},
	pages = {1--9}
}

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