Bonding silicon-on-insulator to glass wafers for integrated bio-electronic circuits. Kim, H.; Blick, R.; Kim, D.; and Eom, C. APPLIED PHYSICS LETTERS, 85(12):2370-2372, SEP 20, 2004.
doi  abstract   bibtex   
We report a method for bonding silicon-on-insulator wafers onto glass wafers. After pre-cleaning the wafers by an ozone and ultraviolet exposure, followed by mega-sonic water rinse, the SOI wafers are bonded to glass wafers in a vacuum chamber. This is performed at a temperature of 400 degreesC under an applied voltage of 700 V. The interface between the glass and SOI wafer is tested mechanically and inspected by electron beam microscopy. Furthermore, we demonstrate removal of the silicon bulk layer after wafer bonding. The quality of the single crystalline Si thin film on the glass wafers has been verified by four-circle x-ray diffraction and scanning electron microscopy. This process will allow us the integration of thin-film electronics in biological sensor applications. (C) 2004 American Institute of Physics.
@article{ ISI:000224145300072,
Author = {Kim, HS and Blick, RH and Kim, DM and Eom, CB},
Title = {{Bonding silicon-on-insulator to glass wafers for integrated
   bio-electronic circuits}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{2004}},
Volume = {{85}},
Number = {{12}},
Pages = {{2370-2372}},
Month = {{SEP 20}},
Abstract = {{We report a method for bonding silicon-on-insulator wafers onto glass
   wafers. After pre-cleaning the wafers by an ozone and ultraviolet
   exposure, followed by mega-sonic water rinse, the SOI wafers are bonded
   to glass wafers in a vacuum chamber. This is performed at a temperature
   of 400 degreesC under an applied voltage of 700 V. The interface between
   the glass and SOI wafer is tested mechanically and inspected by electron
   beam microscopy. Furthermore, we demonstrate removal of the silicon bulk
   layer after wafer bonding. The quality of the single crystalline Si thin
   film on the glass wafers has been verified by four-circle x-ray
   diffraction and scanning electron microscopy. This process will allow us
   the integration of thin-film electronics in biological sensor
   applications. (C) 2004 American Institute of Physics.}},
DOI = {{10.1063/1.1794855}},
ISSN = {{0003-6951}},
ResearcherID-Numbers = {{Eom, Chang-Beom/I-5567-2014}},
Unique-ID = {{ISI:000224145300072}},
}
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