Optimization of programming current on endurance of phase change memory

Optimization of programming current on endurance of phase change memory. Kim, S., Du, P. Y., Li, J., Breitwisch, M., Zhu, Y., Mittal, S., Cheek, R., Hsu, T. H., Lee, M. H., Schrott, A., Raoux, S., Cheng, H. Y., Lai, S. C., Wu, J. Y., Wang, T. Y., Joseph, E. A., Lai, E. K., Ray, A., Lung, H. L., & Lam, C. In Proceedings of Technical Program of 2012 VLSI Technology, System and Application (<strong>VLSI-TSA</strong>), pages 1–2, April, 2012.
doi bibtex

@INPROCEEDINGS{kim2012vlsitsa, 
author={S. Kim and P. Y. Du and Jing Li and M. Breitwisch and Y. Zhu and S. Mittal and R. Cheek and T. H. Hsu and M. H. Lee and A. Schrott and S. Raoux and H. Y. Cheng and S. C. Lai and J. Y. Wu and T. Y. Wang and E. A. Joseph and E. K. Lai and A. Ray and H. L. Lung and C. Lam}, 
booktitle={Proceedings of Technical Program of 2012 VLSI Technology, System and Application (<strong>VLSI-TSA</strong>)}, 
title={Optimization of programming current on endurance of phase change memory}, 
year={2012}, 
volume={}, 
number={}, 
pages={1--2}, 
keywords={conference, failure analysis,phase change memories,RESET current margin,endurance cycles,endurance failure modes,material segregation effect,open failure,optimization,phase change memory,phase-dependent open-failure mechanisms,programming conditions,programming current,stuck-SET failure characteristic curves,Current density,Optimization,Phase change materials,Phase change memory,Programming,Resistance}, 
doi={10.1109/VLSI-TSA.2012.6210122}, 
ISSN={1524-766X}, 
month={April},}

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