CMOS Charge Pump With No Reversion Loss and Enhanced Drivability. Kim, J., Park, S., Kwon, K., Kong, B., Choi, J., & Jun, Y. IEEE Trans. VLSI Syst. (TVLSI), 22(6):1441-1445, 2014.
CMOS Charge Pump With No Reversion Loss and Enhanced Drivability [link]Paper  bibtex   
@article{ dblp2057822,
  title = {CMOS Charge Pump With No Reversion Loss and Enhanced Drivability},
  author = {Joung-Yeal Kim and Su-Jin Park and Kee-Won Kwon and Bai-Sun Kong and Joo-Sun Choi and Young-Hyun Jun},
  author_short = {Kim, J. and Park, S. and Kwon, K. and Kong, B. and Choi, J. and Jun, Y.},
  bibtype = {article},
  type = {article},
  year = {2014},
  key = {dblp2057822},
  id = {dblp2057822},
  biburl = {http://www.dblp.org/rec/bibtex/journals/tvlsi/KimPKKCJ14},
  url = {http://dx.doi.org/10.1109/TVLSI.2013.2267214},
  journal = {IEEE Trans. VLSI Syst. (TVLSI)},
  pages = {1441-1445},
  number = {6},
  volume = {22},
  text = {IEEE Trans. VLSI Syst. (TVLSI) 22(6):1441-1445 (2014)}
}

Downloads: 0