CMOS Charge Pump With No Reversion Loss and Enhanced Drivability. Kim, J., Park, S., Kwon, K., Kong, B., Choi, J., & Jun, Y. IEEE Trans. VLSI Syst. (TVLSI), 22(6):1441-1445, 2014.
Paper bibtex @article{ dblp2057822,
title = {CMOS Charge Pump With No Reversion Loss and Enhanced Drivability},
author = {Joung-Yeal Kim and Su-Jin Park and Kee-Won Kwon and Bai-Sun Kong and Joo-Sun Choi and Young-Hyun Jun},
author_short = {Kim, J. and Park, S. and Kwon, K. and Kong, B. and Choi, J. and Jun, Y.},
bibtype = {article},
type = {article},
year = {2014},
key = {dblp2057822},
id = {dblp2057822},
biburl = {http://www.dblp.org/rec/bibtex/journals/tvlsi/KimPKKCJ14},
url = {http://dx.doi.org/10.1109/TVLSI.2013.2267214},
journal = {IEEE Trans. VLSI Syst. (TVLSI)},
pages = {1441-1445},
number = {6},
volume = {22},
text = {IEEE Trans. VLSI Syst. (TVLSI) 22(6):1441-1445 (2014)}
}
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