Interface reaction between Ni and amorphous SiC. Kim, S.; Perepezko, J., H.; Dong, Z.; and Edelstein, A., S. In Journal of Electronic Materials, volume 33, pages 1064-1070, 2004.
Interface reaction between Ni and amorphous SiC [pdf]Paper  abstract   bibtex   
A Ni/amorphous SiC (a-SiC) multilayered sample was prepared by ion-beam sputtering and was used as a model system to study the stability of metal contacts with a-SiC against interface reactions. The diffusion of Ni into the a-SiC layer as well as Si and C into the Ni layer takes place concurrently during the annealing process. An intermediate NiSi phase was identified in the Ni solution layer because of diffusion of Si and C resulting from the decomposition of a-SiC. A phase selection diagram has been developed that accounts for nucleation of the NiSi phase from the Ni solution layer.
@inProceedings{
 title = {Interface reaction between Ni and amorphous SiC},
 type = {inProceedings},
 year = {2004},
 identifiers = {[object Object]},
 keywords = {Amorphous,Interface reaction,Ni,Nucleation phase-selection diagram,Sic},
 pages = {1064-1070},
 volume = {33},
 issue = {10},
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 abstract = {A Ni/amorphous SiC (a-SiC) multilayered sample was prepared by ion-beam sputtering and was used as a model system to study the stability of metal contacts with a-SiC against interface reactions. The diffusion of Ni into the a-SiC layer as well as Si and C into the Ni layer takes place concurrently during the annealing process. An intermediate NiSi phase was identified in the Ni solution layer because of diffusion of Si and C resulting from the decomposition of a-SiC. A phase selection diagram has been developed that accounts for nucleation of the NiSi phase from the Ni solution layer.},
 bibtype = {inProceedings},
 author = {Kim, Sungtae and Perepezko, J. H. and Dong, Z. and Edelstein, A. S.},
 booktitle = {Journal of Electronic Materials}
}
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