@inProceedings{
 title = {Interface reaction between Ni and amorphous SiC},
 type = {inProceedings},
 year = {2004},
 identifiers = {[object Object]},
 keywords = {Amorphous,Interface reaction,Ni,Nucleation phase-selection diagram,Sic},
 pages = {1064-1070},
 volume = {33},
 issue = {10},
 id = {774dc7a8-0862-332c-a21d-6d9351805dcd},
 created = {2018-09-14T20:50:19.614Z},
 file_attached = {true},
 profile_id = {70644822-a92d-388e-a930-3d28afc76b1e},
 group_id = {f7d35d58-7823-3e09-9e83-2d24928a3f0e},
 last_modified = {2019-01-07T22:04:24.234Z},
 read = {false},
 starred = {false},
 authored = {false},
 confirmed = {true},
 hidden = {false},
 private_publication = {false},
 abstract = {A Ni/amorphous SiC (a-SiC) multilayered sample was prepared by ion-beam sputtering and was used as a model system to study the stability of metal contacts with a-SiC against interface reactions. The diffusion of Ni into the a-SiC layer as well as Si and C into the Ni layer takes place concurrently during the annealing process. An intermediate NiSi phase was identified in the Ni solution layer because of diffusion of Si and C resulting from the decomposition of a-SiC. A phase selection diagram has been developed that accounts for nucleation of the NiSi phase from the Ni solution layer.},
 bibtype = {inProceedings},
 author = {Kim, Sungtae and Perepezko, J. H. and Dong, Z. and Edelstein, A. S.},
 booktitle = {Journal of Electronic Materials}
}

{"_id":"WDFXwx6RQYSLX9voi","bibbaseid":"kim-perepezko-dong-edelstein-interfacereactionbetweenniandamorphoussic-2004","downloads":0,"creationDate":"2019-01-26T04:23:27.388Z","title":"Interface reaction between Ni and amorphous SiC","author_short":["Kim, S.","Perepezko, J., H.","Dong, Z.","Edelstein, A., S."],"year":2004,"bibtype":"inProceedings","biburl":null,"bibdata":{"title":"Interface reaction between Ni and amorphous SiC","type":"inProceedings","year":"2004","identifiers":"[object Object]","keywords":"Amorphous,Interface reaction,Ni,Nucleation phase-selection diagram,Sic","pages":"1064-1070","volume":"33","issue":"10","id":"774dc7a8-0862-332c-a21d-6d9351805dcd","created":"2018-09-14T20:50:19.614Z","file_attached":"true","profile_id":"70644822-a92d-388e-a930-3d28afc76b1e","group_id":"f7d35d58-7823-3e09-9e83-2d24928a3f0e","last_modified":"2019-01-07T22:04:24.234Z","read":false,"starred":false,"authored":false,"confirmed":"true","hidden":false,"private_publication":false,"abstract":"A Ni/amorphous SiC (a-SiC) multilayered sample was prepared by ion-beam sputtering and was used as a model system to study the stability of metal contacts with a-SiC against interface reactions. The diffusion of Ni into the a-SiC layer as well as Si and C into the Ni layer takes place concurrently during the annealing process. An intermediate NiSi phase was identified in the Ni solution layer because of diffusion of Si and C resulting from the decomposition of a-SiC. A phase selection diagram has been developed that accounts for nucleation of the NiSi phase from the Ni solution layer.","bibtype":"inProceedings","author":"Kim, Sungtae and Perepezko, J. H. and Dong, Z. and Edelstein, A. S.","booktitle":"Journal of Electronic Materials","bibtex":"@inProceedings{\n title = {Interface reaction between Ni and amorphous SiC},\n type = {inProceedings},\n year = {2004},\n identifiers = {[object Object]},\n keywords = {Amorphous,Interface reaction,Ni,Nucleation phase-selection diagram,Sic},\n pages = {1064-1070},\n volume = {33},\n issue = {10},\n id = {774dc7a8-0862-332c-a21d-6d9351805dcd},\n created = {2018-09-14T20:50:19.614Z},\n file_attached = {true},\n profile_id = {70644822-a92d-388e-a930-3d28afc76b1e},\n group_id = {f7d35d58-7823-3e09-9e83-2d24928a3f0e},\n last_modified = {2019-01-07T22:04:24.234Z},\n read = {false},\n starred = {false},\n authored = {false},\n confirmed = {true},\n hidden = {false},\n private_publication = {false},\n abstract = {A Ni/amorphous SiC (a-SiC) multilayered sample was prepared by ion-beam sputtering and was used as a model system to study the stability of metal contacts with a-SiC against interface reactions. The diffusion of Ni into the a-SiC layer as well as Si and C into the Ni layer takes place concurrently during the annealing process. An intermediate NiSi phase was identified in the Ni solution layer because of diffusion of Si and C resulting from the decomposition of a-SiC. A phase selection diagram has been developed that accounts for nucleation of the NiSi phase from the Ni solution layer.},\n bibtype = {inProceedings},\n author = {Kim, Sungtae and Perepezko, J. H. and Dong, Z. and Edelstein, A. S.},\n booktitle = {Journal of Electronic Materials}\n}","author_short":["Kim, S.","Perepezko, J., H.","Dong, Z.","Edelstein, A., S."],"urls":{"Paper":"https://bibbase.org/service/mendeley/70644822-a92d-388e-a930-3d28afc76b1e/file/35903fbc-161c-a62f-18f5-0df067a51753/2004-Interface_reaction_between_Ni_and_amorphous_SiC.pdf.pdf"},"bibbaseid":"kim-perepezko-dong-edelstein-interfacereactionbetweenniandamorphoussic-2004","role":"author","keyword":["Amorphous","Interface reaction","Ni","Nucleation phase-selection diagram","Sic"],"downloads":0},"search_terms":["interface","reaction","between","amorphous","sic","kim","perepezko","dong","edelstein"],"keywords":["amorphous","interface reaction","ni","nucleation phase-selection diagram","sic"],"authorIDs":[]}