Long-Range Lattice Engineering of MoTe2 by a 2D Electride

Long-Range Lattice Engineering of MoTe2 by a 2D Electride. Kim, S., Song, S., Park, J., Yu, H. S., Cho, S., Kim, D., Baik, J., Choe, D., Chang, K. J., Lee, Y. H., Kim, S. W., & Yang, H. Nano Letters, 17(6):3363–3368, June, 2017.

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Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to ∼1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N]+·e– to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 × 1014 cm–2 and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metal–semiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N]+·e–. The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering.

@article{kim_long-range_2017,
	title = {Long-{Range} {Lattice} {Engineering} of {MoTe2} by a {2D} {Electride}},
	volume = {17},
	issn = {1530-6984},
	url = {https://doi.org/10.1021/acs.nanolett.6b05199},
	doi = {10.1021/acs.nanolett.6b05199},
	abstract = {Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to ∼1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N]+·e– to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 × 1014 cm–2 and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metal–semiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N]+·e–. The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering.},
	number = {6},
	urldate = {2020-06-28},
	journal = {Nano Letters},
	author = {Kim, Sera and Song, Seunghyun and Park, Jongho and Yu, Ho Sung and Cho, Suyeon and Kim, Dohyun and Baik, Jaeyoon and Choe, Duk-Hyun and Chang, K. J. and Lee, Young Hee and Kim, Sung Wng and Yang, Heejun},
	month = jun,
	year = {2017},
	pages = {3363--3368},
}

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