First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates. Kim, E., Zhang, Z., Singhal, J., Nomoto, K., Hickman, A., Toita, M., Jena, D., & Xing, H. G. In 2022 Device Research Conference (DRC), pages 1–2, Columbus, OH, USA, June, 2022. IEEE. ![First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates [link]](https://bibbase.org/img/filetypes/link.svg "link")
Paper doi bibtex @inproceedings{kim_first_2022,
address = {Columbus, OH, USA},
title = {First demonstration of {N}-polar {GaN}/{AlGaN}/{AlN} {HEMT} on {Single} {Crystal} {AlN} {Substrates}},
isbn = {978-1-66549-883-8},
url = {https://ieeexplore.ieee.org/document/9855776/},
doi = {10.1109/DRC55272.2022.9855776},
language = {en},
urldate = {2023-05-19},
booktitle = {2022 {Device} {Research} {Conference} ({DRC})},
publisher = {IEEE},
author = {Kim, Eungkyun and Zhang, Zexuan and Singhal, Jashan and Nomoto, Kazuki and Hickman, Austin and Toita, Masato and Jena, Debdeep and Xing, Huili Grace},
month = jun,
year = {2022},
keywords = {HEMTs},
pages = {1--2},
}
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