First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates. Kim, E., Zhang, Z., Singhal, J., Nomoto, K., Hickman, A., Toita, M., Jena, D., & Xing, H. G. In 2022 Device Research Conference (DRC), pages 1–2, Columbus, OH, USA, June, 2022. IEEE.
First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates [link]Paper  doi  bibtex   
@inproceedings{kim_first_2022,
	address = {Columbus, OH, USA},
	title = {First demonstration of {N}-polar {GaN}/{AlGaN}/{AlN} {HEMT} on {Single} {Crystal} {AlN} {Substrates}},
	isbn = {978-1-66549-883-8},
	url = {https://ieeexplore.ieee.org/document/9855776/},
	doi = {10.1109/DRC55272.2022.9855776},
	language = {en},
	urldate = {2023-05-19},
	booktitle = {2022 {Device} {Research} {Conference} ({DRC})},
	publisher = {IEEE},
	author = {Kim, Eungkyun and Zhang, Zexuan and Singhal, Jashan and Nomoto, Kazuki and Hickman, Austin and Toita, Masato and Jena, Debdeep and Xing, Huili Grace},
	month = jun,
	year = {2022},
	keywords = {HEMTs},
	pages = {1--2},
}

Downloads: 0