@article{ ISI:000340521000010,
Author = {Klangtakai, Pawinee and Sanorpim, Sakuntam and Karlsson, Fredrik and
   Holtz, Per Olof and Pimanpang, Samuk and Onabe, Kentaro},
Title = {{Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs
   T-shaped quantum wire}},
Journal = {{PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}},
Year = {{2014}},
Volume = {{211}},
Number = {{8}},
Pages = {{1740-1744}},
Month = {{AUG}},
Abstract = {{The selected InGaAsN/GaAs T-shaped quantum wire (T-QWR) fabricated by
   metal organic vapor phase epitaxy has been investigated by
   microphotoluminescence (m-PL) and excitation-power-dependent mu-PL. The
   optical characteristics of one-dimensional structure were taken at
   low-temperature (4 K) and room temperature (RT) to clarify the
   intersection of two familiar quantum wells (QWs) in the {[}001] and
   {[}110] directions, named QW1 and QW2, respectively. For the
   excitation-power-dependent measurement, the intensity of the excitation
   source was used in the range of 0.001I(0) to I-0. The result shows that
   all of emissions related to QW1 and QWR peaks have a nonsymmetric line
   shape as evidenced by the tailing on the lower-energy side. All peaks
   shift to higher-energy side (blueshift) with the increase of the
   excitation power intensity. The blueshift and the low-energy tailing of
   PL peaks are attributed to the alloying effect. However, the emission
   peak related to QWR region shows a larger blueshift rate than that of
   QW1 on increasing of the excitation power intensity. This is an
   anomalous characteristic for the low-dimensional structure, affected by
   the large fluctuation state in the QWR region. This fluctuation state is
   combined of both edges of QWs (QW1 and QW2). (C) 2014 WILEY-VCH Verlag
   GmbH \& Co. KGaA, Weinheim}},
DOI = {{10.1002/pssa.201330543}},
ISSN = {{1862-6300}},
EISSN = {{1862-6319}},
ResearcherID-Numbers = {{Karlsson, Fredrik/D-5016-2011
   Holtz, Per Olof/L-5598-2015}},
ORCID-Numbers = {{Karlsson, Fredrik/0000-0002-4547-6673
   Holtz, Per Olof/0000-0003-0668-7504}},
Unique-ID = {{ISI:000340521000010}},
}

{"_id":"xLHMG6SpwvuJWEWKM","bibbaseid":"klangtakai-sanorpim-karlsson-holtz-pimanpang-onabe-anomalousexcitationpowerdependentphotoluminescenceofingaasngaastshapedquantumwire-2014","authorIDs":[],"author_short":["Klangtakai, P.","Sanorpim, S.","Karlsson, F.","Holtz, P. O.","Pimanpang, S.","Onabe, K."],"bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["Klangtakai"],"firstnames":["Pawinee"],"suffixes":[]},{"propositions":[],"lastnames":["Sanorpim"],"firstnames":["Sakuntam"],"suffixes":[]},{"propositions":[],"lastnames":["Karlsson"],"firstnames":["Fredrik"],"suffixes":[]},{"propositions":[],"lastnames":["Holtz"],"firstnames":["Per","Olof"],"suffixes":[]},{"propositions":[],"lastnames":["Pimanpang"],"firstnames":["Samuk"],"suffixes":[]},{"propositions":[],"lastnames":["Onabe"],"firstnames":["Kentaro"],"suffixes":[]}],"title":"Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire","journal":"PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE","year":"2014","volume":"211","number":"8","pages":"1740-1744","month":"AUG","abstract":"The selected InGaAsN/GaAs T-shaped quantum wire (T-QWR) fabricated by metal organic vapor phase epitaxy has been investigated by microphotoluminescence (m-PL) and excitation-power-dependent mu-PL. The optical characteristics of one-dimensional structure were taken at low-temperature (4 K) and room temperature (RT) to clarify the intersection of two familiar quantum wells (QWs) in the [001] and [110] directions, named QW1 and QW2, respectively. For the excitation-power-dependent measurement, the intensity of the excitation source was used in the range of 0.001I(0) to I-0. The result shows that all of emissions related to QW1 and QWR peaks have a nonsymmetric line shape as evidenced by the tailing on the lower-energy side. All peaks shift to higher-energy side (blueshift) with the increase of the excitation power intensity. The blueshift and the low-energy tailing of PL peaks are attributed to the alloying effect. However, the emission peak related to QWR region shows a larger blueshift rate than that of QW1 on increasing of the excitation power intensity. This is an anomalous characteristic for the low-dimensional structure, affected by the large fluctuation state in the QWR region. This fluctuation state is combined of both edges of QWs (QW1 and QW2). (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim","doi":"10.1002/pssa.201330543","issn":"1862-6300","eissn":"1862-6319","researcherid-numbers":"Karlsson, Fredrik/D-5016-2011 Holtz, Per Olof/L-5598-2015","orcid-numbers":"Karlsson, Fredrik/0000-0002-4547-6673 Holtz, Per Olof/0000-0003-0668-7504","unique-id":"ISI:000340521000010","bibtex":"@article{ ISI:000340521000010,\nAuthor = {Klangtakai, Pawinee and Sanorpim, Sakuntam and Karlsson, Fredrik and\n Holtz, Per Olof and Pimanpang, Samuk and Onabe, Kentaro},\nTitle = {{Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs\n T-shaped quantum wire}},\nJournal = {{PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE}},\nYear = {{2014}},\nVolume = {{211}},\nNumber = {{8}},\nPages = {{1740-1744}},\nMonth = {{AUG}},\nAbstract = {{The selected InGaAsN/GaAs T-shaped quantum wire (T-QWR) fabricated by\n metal organic vapor phase epitaxy has been investigated by\n microphotoluminescence (m-PL) and excitation-power-dependent mu-PL. The\n optical characteristics of one-dimensional structure were taken at\n low-temperature (4 K) and room temperature (RT) to clarify the\n intersection of two familiar quantum wells (QWs) in the {[}001] and\n {[}110] directions, named QW1 and QW2, respectively. For the\n excitation-power-dependent measurement, the intensity of the excitation\n source was used in the range of 0.001I(0) to I-0. The result shows that\n all of emissions related to QW1 and QWR peaks have a nonsymmetric line\n shape as evidenced by the tailing on the lower-energy side. All peaks\n shift to higher-energy side (blueshift) with the increase of the\n excitation power intensity. The blueshift and the low-energy tailing of\n PL peaks are attributed to the alloying effect. However, the emission\n peak related to QWR region shows a larger blueshift rate than that of\n QW1 on increasing of the excitation power intensity. This is an\n anomalous characteristic for the low-dimensional structure, affected by\n the large fluctuation state in the QWR region. This fluctuation state is\n combined of both edges of QWs (QW1 and QW2). (C) 2014 WILEY-VCH Verlag\n GmbH \\& Co. KGaA, Weinheim}},\nDOI = {{10.1002/pssa.201330543}},\nISSN = {{1862-6300}},\nEISSN = {{1862-6319}},\nResearcherID-Numbers = {{Karlsson, Fredrik/D-5016-2011\n Holtz, Per Olof/L-5598-2015}},\nORCID-Numbers = {{Karlsson, Fredrik/0000-0002-4547-6673\n Holtz, Per Olof/0000-0003-0668-7504}},\nUnique-ID = {{ISI:000340521000010}},\n}\n\n","author_short":["Klangtakai, P.","Sanorpim, S.","Karlsson, F.","Holtz, P. O.","Pimanpang, S.","Onabe, K."],"key":"ISI:000340521000010","id":"ISI:000340521000010","bibbaseid":"klangtakai-sanorpim-karlsson-holtz-pimanpang-onabe-anomalousexcitationpowerdependentphotoluminescenceofingaasngaastshapedquantumwire-2014","role":"author","urls":{},"downloads":0},"bibtype":"article","biburl":"http://nanotec.cnr.it/data/nanotec/nanotec-full.bib","creationDate":"2020-04-22T21:25:44.057Z","downloads":0,"keywords":[],"search_terms":["anomalous","excitation","power","dependent","photoluminescence","ingaasn","gaas","shaped","quantum","wire","klangtakai","sanorpim","karlsson","holtz","pimanpang","onabe"],"title":"Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire","year":2014,"dataSources":["ZTEbWc6bW5f9DTsjF"]}