Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO. Kobayashi, A., Sankey, O. F., Volz, S. M., & Dow, J. D. Physical Review B, 28(2):935–945, July, 1983.
Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO [link]Paper  doi  abstract   bibtex   
Semiempirical tight-binding electronic energy band structures of the following wurtzite materials are reported: AlN, CdS, CdSe, ZnS, and ZnO.
@article{kobayashi_semiempirical_1983,
	title = {Semiempirical tight-binding band structures of wurtzite semiconductors: {AlN}, {CdS}, {CdSe}, {ZnS}, and {ZnO}},
	volume = {28},
	shorttitle = {Semiempirical tight-binding band structures of wurtzite semiconductors},
	url = {http://link.aps.org/doi/10.1103/PhysRevB.28.935},
	doi = {10.1103/PhysRevB.28.935},
	abstract = {Semiempirical tight-binding electronic energy band structures of the following wurtzite materials are reported: AlN, CdS, CdSe, ZnS, and ZnO.},
	number = {2},
	urldate = {2012-05-16},
	journal = {Physical Review B},
	author = {Kobayashi, Akiko and Sankey, Otto F. and Volz, Stephen M. and Dow, John D.},
	month = jul,
	year = {1983},
	pages = {935--945},
}

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