Semiempirical tight-binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO. Kobayashi, A., Sankey, O. F., Volz, S. M., & Dow, J. D. Physical Review B, 28(2):935–945, July, 1983. Paper doi abstract bibtex Semiempirical tight-binding electronic energy band structures of the following wurtzite materials are reported: AlN, CdS, CdSe, ZnS, and ZnO.
@article{kobayashi_semiempirical_1983,
title = {Semiempirical tight-binding band structures of wurtzite semiconductors: {AlN}, {CdS}, {CdSe}, {ZnS}, and {ZnO}},
volume = {28},
shorttitle = {Semiempirical tight-binding band structures of wurtzite semiconductors},
url = {http://link.aps.org/doi/10.1103/PhysRevB.28.935},
doi = {10.1103/PhysRevB.28.935},
abstract = {Semiempirical tight-binding electronic energy band structures of the following wurtzite materials are reported: AlN, CdS, CdSe, ZnS, and ZnO.},
number = {2},
urldate = {2012-05-16},
journal = {Physical Review B},
author = {Kobayashi, Akiko and Sankey, Otto F. and Volz, Stephen M. and Dow, John D.},
month = jul,
year = {1983},
pages = {935--945},
}
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