@article{ kocka_microcrystalline_2009,
  title = {Microcrystalline silicon, grain boundaries and role of oxygen},
  volume = {93},
  issn = {0927-0248},
  url = {http://www.sciencedirect.com/science/article/B6V51-4VP12GK-1/2/cc54fc15b66cc3c14e3a9d125fe44003},
  doi = {10.1016/j.solmat.2009.01.013},
  abstract = {The authors report on the correlation of the oxygen content for three high growth-rate series of thin Si films crossing the boundary between amorphous and microcrystalline growth together with the evolution of the prefactor and the activation energy of the dark d.c. conductivity. The different roles of oxygen, such as doping, alloying or defect passivation, are discussed in the framework of the model of transport based on the formation of large grain boundaries with an increased band gap due to hydrogen and/or oxygen alloying.},
  number = {8},
  urldate = {2009-05-27TZ},
  journal = {Solar Energy Materials and Solar Cells},
  author = {Kocka, J. and Stuchlíková, H. and Ledinský, M. and Stuchlík, J. and Mates, T. and Fejfar, A.},
  month = {August},
  year = {2009},
  keywords = {Electronic transport, Microcrystalline silicon, {OXYGEN}, grain boundaries, hydrogen},
  pages = {1444--1447}
}

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