End of range defects in Ge. Koffel, S., Cherkashin, N., Houdellier, F., Hytch, M. J., Benassayag, G., Scheiblin, P., & Claverie, A. Journal of Applied Physics, 105(12):126110, June, 2009. WOS:000267599600175doi abstract bibtex We show that the solid-phase epitaxial regrowth of amorphous layers created by ion implantation in Ge results in the formation of extended defects of interstitial-type. During annealing, these defects evolve in size and density following, as in Si, an Ostwald ripening mechanism. However, this process becomes nonconservative as the annealing temperature increases to 600 degrees C. This suggests that the recombination/annihilation of Ge interstitial atoms becomes important at these temperatures. These results have important implications for the modeling of diffusion of implanted dopants in Ge. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3153985]
@article{koffel_end_2009,
title = {End of range defects in {Ge}},
volume = {105},
issn = {0021-8979},
doi = {10.1063/1.3153985},
abstract = {We show that the solid-phase epitaxial regrowth of amorphous layers created by ion implantation in Ge results in the formation of extended defects of interstitial-type. During annealing, these defects evolve in size and density following, as in Si, an Ostwald ripening mechanism. However, this process becomes nonconservative as the annealing temperature increases to 600 degrees C. This suggests that the recombination/annihilation of Ge interstitial atoms becomes important at these temperatures. These results have important implications for the modeling of diffusion of implanted dopants in Ge. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3153985]},
language = {English},
number = {12},
journal = {Journal of Applied Physics},
author = {Koffel, S. and Cherkashin, N. and Houdellier, F. and Hytch, M. J. and Benassayag, G. and Scheiblin, P. and Claverie, A.},
month = jun,
year = {2009},
note = {WOS:000267599600175},
keywords = {Diffusion, Extended defects, Germanium, Implantation, activation, dislocation loops, si, silicon},
pages = {126110},
}
Downloads: 0
{"_id":{"_str":"534297d90e946d920a002104"},"__v":3,"authorIDs":[],"author_short":["Koffel, S.","Cherkashin, N.","Houdellier, F.","Hytch, M. J.","Benassayag, G.","Scheiblin, P.","Claverie, A."],"bibbaseid":"koffel-cherkashin-houdellier-hytch-benassayag-scheiblin-claverie-endofrangedefectsinge-2009","bibdata":{"bibtype":"article","type":"article","title":"End of range defects in Ge","volume":"105","issn":"0021-8979","doi":"10.1063/1.3153985","abstract":"We show that the solid-phase epitaxial regrowth of amorphous layers created by ion implantation in Ge results in the formation of extended defects of interstitial-type. During annealing, these defects evolve in size and density following, as in Si, an Ostwald ripening mechanism. However, this process becomes nonconservative as the annealing temperature increases to 600 degrees C. This suggests that the recombination/annihilation of Ge interstitial atoms becomes important at these temperatures. These results have important implications for the modeling of diffusion of implanted dopants in Ge. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3153985]","language":"English","number":"12","journal":"Journal of Applied Physics","author":[{"propositions":[],"lastnames":["Koffel"],"firstnames":["S."],"suffixes":[]},{"propositions":[],"lastnames":["Cherkashin"],"firstnames":["N."],"suffixes":[]},{"propositions":[],"lastnames":["Houdellier"],"firstnames":["F."],"suffixes":[]},{"propositions":[],"lastnames":["Hytch"],"firstnames":["M.","J."],"suffixes":[]},{"propositions":[],"lastnames":["Benassayag"],"firstnames":["G."],"suffixes":[]},{"propositions":[],"lastnames":["Scheiblin"],"firstnames":["P."],"suffixes":[]},{"propositions":[],"lastnames":["Claverie"],"firstnames":["A."],"suffixes":[]}],"month":"June","year":"2009","note":"WOS:000267599600175","keywords":"Diffusion, Extended defects, Germanium, Implantation, activation, dislocation loops, si, silicon","pages":"126110","bibtex":"@article{koffel_end_2009,\n\ttitle = {End of range defects in {Ge}},\n\tvolume = {105},\n\tissn = {0021-8979},\n\tdoi = {10.1063/1.3153985},\n\tabstract = {We show that the solid-phase epitaxial regrowth of amorphous layers created by ion implantation in Ge results in the formation of extended defects of interstitial-type. During annealing, these defects evolve in size and density following, as in Si, an Ostwald ripening mechanism. However, this process becomes nonconservative as the annealing temperature increases to 600 degrees C. This suggests that the recombination/annihilation of Ge interstitial atoms becomes important at these temperatures. These results have important implications for the modeling of diffusion of implanted dopants in Ge. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3153985]},\n\tlanguage = {English},\n\tnumber = {12},\n\tjournal = {Journal of Applied Physics},\n\tauthor = {Koffel, S. and Cherkashin, N. and Houdellier, F. and Hytch, M. J. and Benassayag, G. and Scheiblin, P. and Claverie, A.},\n\tmonth = jun,\n\tyear = {2009},\n\tnote = {WOS:000267599600175},\n\tkeywords = {Diffusion, Extended defects, Germanium, Implantation, activation, dislocation loops, si, silicon},\n\tpages = {126110},\n}\n\n","author_short":["Koffel, S.","Cherkashin, N.","Houdellier, F.","Hytch, M. J.","Benassayag, G.","Scheiblin, P.","Claverie, A."],"key":"koffel_end_2009-1","id":"koffel_end_2009-1","bibbaseid":"koffel-cherkashin-houdellier-hytch-benassayag-scheiblin-claverie-endofrangedefectsinge-2009","role":"author","urls":{},"keyword":["Diffusion","Extended defects","Germanium","Implantation","activation","dislocation loops","si","silicon"],"metadata":{"authorlinks":{}},"html":""},"bibtype":"article","biburl":"https://bibbase.org/zotero/spintextures","downloads":0,"keywords":["diffusion","extended defects","germanium","implantation","activation","dislocation loops","si","silicon"],"search_terms":["end","range","defects","koffel","cherkashin","houdellier","hytch","benassayag","scheiblin","claverie"],"title":"End of range defects in Ge","year":2009,"dataSources":["nLho29PvMiq3Di5k6","rXHvWQJHcL8ctHS4s"]}