Mobility of Ga confined in nanostructured alumina. Konrad, H., Karmonik, C., Weissmuller, J., Gleiter, H., Birringer, R., & Hempelmann, R. Physica B, 234:173--174, June, 1997. WOS:A1997XG66600069
doi  abstract   bibtex   
The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by DSC. At temperatures near T-m part of the Ga film is molten whereas about six monolayers remain solid even 20 K above T-m. The diffusion of the Ga was investigated by means of QENS. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.
@article{ konrad_mobility_1997,
  title = {Mobility of Ga confined in nanostructured alumina},
  volume = {234},
  issn = {0921-4526},
  doi = {10.1016/S0921-4526(96)00941-6},
  abstract = {The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by {DSC}. At temperatures near T-m part of the Ga film is molten whereas about six monolayers remain solid even 20 K above T-m. The diffusion of the Ga was investigated by means of {QENS}. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.},
  journal = {Physica B},
  author = {Konrad, H. and Karmonik, C. and Weissmuller, J. and Gleiter, H. and Birringer, R. and Hempelmann, R.},
  month = {June},
  year = {1997},
  note = {{WOS}:A1997XG66600069},
  pages = {173--174}
}
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