Onset of plastic relaxation in semipolar (11(2)over-bar2) InxGa1-xN/GaN heterostructures. Koslow, I. L., Hardy, M. T., Hsu, P. S., Wu, F., Romanov, A. E., Young, E. C., Nakamura, S., DenBaars, S. P., & Speck, J. S. Journal of Crystal Growth, 388:48–53, February, 2014. WOS:000329505600009doi abstract bibtex The onset of plastic relaxation via misfit dislocation (MD) formation in InxGa1-xN layers grown by metal-organic chemical vapor deposition on the (11 (2) over bar2) semipolar plane of GaN substrates is investigated using high-resolution X-ray diffraction, transmission electron microscopy and cathodoluminescence. The results of critical thickness calculations for MD formation as a function of InxGa1-xN alloy composition x are compared with experimental observations. MD generation is observed initially as a result of slip on the (0001) slip plane, and subsequently as a result of additional slip on inclined [1 (1) over bar 00p̌hantom\\ type m-planes, which eventually leads to an increase in threading dislocation density. (C) 2013 Elsevier B.V. All rights reserved.
@article{koslow_onset_2014,
title = {Onset of plastic relaxation in semipolar (11(2)over-bar2) {InxGa1}-{xN}/{GaN} heterostructures},
volume = {388},
issn = {0022-0248},
doi = {10.1016/j.jcrysgro.2013.10.027},
abstract = {The onset of plastic relaxation via misfit dislocation (MD) formation in InxGa1-xN layers grown by metal-organic chemical vapor deposition on the (11 (2) over bar2) semipolar plane of GaN substrates is investigated using high-resolution X-ray diffraction, transmission electron microscopy and cathodoluminescence. The results of critical thickness calculations for MD formation as a function of InxGa1-xN alloy composition x are compared with experimental observations. MD generation is observed initially as a result of slip on the (0001) slip plane, and subsequently as a result of additional slip on inclined [1 (1) over bar 00\vphantom{\{}\} type m-planes, which eventually leads to an increase in threading dislocation density. (C) 2013 Elsevier B.V. All rights reserved.},
language = {English},
journal = {Journal of Crystal Growth},
author = {Koslow, Ingrid L. and Hardy, Matthew T. and Hsu, Po Shan and Wu, Feng and Romanov, Alexey E. and Young, Erin C. and Nakamura, Shuji and DenBaars, Steven P. and Speck, James S.},
month = feb,
year = {2014},
note = {WOS:000329505600009},
keywords = {Interfaces, Line defects, Metalorganic vapor phase epitaxy, Nitrides, stresses},
pages = {48--53},
}
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