Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals. Kůsová, K., Hapala, P., Valenta, J., Jelínek, P., Cibulka, O., Ondič, L., & Pelant, I. Advanced Materials Interfaces, 1(2):n/a--n/a, 2014. 00000
Paper doi abstract bibtex Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect-gap nature. Here, we propose a solution to this long-standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by DFT calculations mapping the E(k) band-structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000× increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole-allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure.
@article{ kusova_direct_2014,
title = {Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals},
volume = {1},
copyright = {© 2014 {WILEY}-{VCH} Verlag {GmbH} \& Co. {KGaA}, Weinheim},
issn = {2196-7350},
shorttitle = {Direct Bandgap Silicon},
url = {http://onlinelibrary.wiley.com/doi/10.1002/admi.201300042/abstract},
doi = {10.1002/admi.201300042},
abstract = {Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect-gap nature. Here, we propose a solution to this long-standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by {DFT} calculations mapping the E(k) band-structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000× increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole-allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure.},
language = {en},
number = {2},
urldate = {2014-12-17TZ},
journal = {Advanced Materials Interfaces},
author = {Kůsová, Kateřina and Hapala, Prokop and Valenta, Jan and Jelínek, Pavel and Cibulka, Ondřej and Ondič, Lukáš and Pelant, Ivan},
year = {2014},
note = {00000},
keywords = {Silicon nanocrystals, direct bandgap, photoluminescence, strain engineering, surface termination},
pages = {n/a--n/a}
}
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{"_id":"8kX8XrkrrC3wy7dyS","bibbaseid":"ksov-hapala-valenta-jelnek-cibulka-ondi-pelant-directbandgapsilicontensilestrainedsiliconnanocrystals-2014","downloads":0,"creationDate":"2015-02-03T19:44:44.100Z","title":"Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals","author_short":["Kůsová, K.","Hapala, P.","Valenta, J.","Jelínek, P.","Cibulka, O.","Ondič, L.","Pelant, I."],"year":2014,"bibtype":"article","biburl":"https://api.zotero.org/users/9306/collections/JQW749CI/items?key=56utL422mxibPpzqIPfQYj0t&format=bibtex&limit=100","bibdata":{"abstract":"Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect-gap nature. Here, we propose a solution to this long-standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by DFT calculations mapping the E(k) band-structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000× increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole-allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure.","author":["Kůsová, Kateřina","Hapala, Prokop","Valenta, Jan","Jelínek, Pavel","Cibulka, Ondřej","Ondič, Lukáš","Pelant, Ivan"],"author_short":["Kůsová, K.","Hapala, P.","Valenta, J.","Jelínek, P.","Cibulka, O.","Ondič, L.","Pelant, I."],"bibtex":"@article{ kusova_direct_2014,\n title = {Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals},\n volume = {1},\n copyright = {© 2014 {WILEY}-{VCH} Verlag {GmbH} \\& Co. {KGaA}, Weinheim},\n issn = {2196-7350},\n shorttitle = {Direct Bandgap Silicon},\n url = {http://onlinelibrary.wiley.com/doi/10.1002/admi.201300042/abstract},\n doi = {10.1002/admi.201300042},\n abstract = {Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect-gap nature. Here, we propose a solution to this long-standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgap via a concerted action of quantum confinement and tensile strain. We document this transformation by {DFT} calculations mapping the E(k) band-structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000× increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole-allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and thus the presence of tensile strain, and lastly by photoluminescence studies under external hydrostatic pressure.},\n language = {en},\n number = {2},\n urldate = {2014-12-17TZ},\n journal = {Advanced Materials Interfaces},\n author = {Kůsová, Kateřina and Hapala, Prokop and Valenta, Jan and Jelínek, Pavel and Cibulka, Ondřej and Ondič, Lukáš and Pelant, Ivan},\n year = {2014},\n note = {00000},\n keywords = {Silicon nanocrystals, direct bandgap, photoluminescence, strain engineering, surface termination},\n pages = {n/a--n/a}\n}","bibtype":"article","copyright":"© 2014 WILEY-VCH Verlag GmbH \\& Co. KGaA, Weinheim","doi":"10.1002/admi.201300042","id":"kusova_direct_2014","issn":"2196-7350","journal":"Advanced Materials Interfaces","key":"kusova_direct_2014","keywords":"Silicon nanocrystals, direct bandgap, photoluminescence, strain engineering, surface termination","language":"en","note":"00000","number":"2","pages":"n/a--n/a","shorttitle":"Direct Bandgap Silicon","title":"Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals","type":"article","url":"http://onlinelibrary.wiley.com/doi/10.1002/admi.201300042/abstract","urldate":"2014-12-17TZ","volume":"1","year":"2014","bibbaseid":"ksov-hapala-valenta-jelnek-cibulka-ondi-pelant-directbandgapsilicontensilestrainedsiliconnanocrystals-2014","role":"author","urls":{"Paper":"http://onlinelibrary.wiley.com/doi/10.1002/admi.201300042/abstract"},"keyword":["Silicon nanocrystals","direct bandgap","photoluminescence","strain engineering","surface termination"],"downloads":0},"search_terms":["direct","bandgap","silicon","tensile","strained","silicon","nanocrystals","kůsová","hapala","valenta","jelínek","cibulka","ondič","pelant"],"keywords":["silicon nanocrystals","direct bandgap","photoluminescence","strain engineering","surface termination"],"authorIDs":[],"dataSources":["WPnZAo8YwWpk4So4c"]}