High I$_{\textrm{c}}$, YBa$_{\textrm{2}}$Cu$_{\textrm{3}}$O$_{\textrm{7−x}}}$ films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO$

High I$_{\textrm{c}}$, YBa$_{\textrm{2}}$Cu$_{\textrm{3}}$O$_{\textrm{7−x}}}$ films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO$_{\textrm{3}}$ buffers. Kursumovic, A., Maiorov, B., Durrell, J. H., Wang, H., Zhou, H., Stan, L., Harrington, S., Wimbush, S. C., Holesinger, T. G., & MacManus-Driscoll, J. L. Supercond. Sci. Technol., 22:015009, 2009.
$High I$_{\textrm{c}}$, YBa$_{\textrm{2}}$Cu$_{\textrm{3}}$O$_{\textrm{7−x}}}$ films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO$_{\textrm{3}}$ buffers [pdf]$ Paper doi abstract bibtex

YBa$_{\textrm{2}}$Cu$_{\textrm{3}}$O$_{\textrm{7−x}}}$ (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO$_{\textrm{3}}$ (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J$_{\textrm{c}}$$^{\textrm{sf}}$, at 77 K of ~2.4 MA cm$^{\textrm{−2}}$ and critical currents, I$_{\textrm{c}}$$^{\textrm{sf}}$, up to 700 A (cm-width)$^{\textrm{−1}}$ were achieved. The J$_{\textrm{c}}$ value is virtually independent of thickness and the growth rates are very high (~1 µm min$^{\textrm{−1}}$). From transmission electron microscopy (TEM), Y$_{\textrm{2}}$O$_{\textrm{3}}$ nanocloud extended defects (~100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.

@article{kursumovic_high_2009,
	title = {High \textit{{I}}$_{\textrm{c}}$, {YBa}$_{\textrm{2}}${Cu}$_{\textrm{3}}${O}$_{\textrm{7−\textit{x}}}$ films grown at very high rates by liquid assisted growth incorporating lightly {Au}-doped {SrTiO}$_{\textrm{3}}$ buffers},
	volume = {22},
	issn = {0953-2048},
	url = {/publications/10.1088/0953-2048/22/1/015009.pdf},
	doi = {10.1088/0953-2048/22/1/015009},
	abstract = {YBa$_{\textrm{2}}$Cu$_{\textrm{3}}$O$_{\textrm{7−\textit{x}}}$ (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO$_{\textrm{3}}$ (STO) substrates. In the presence of a 100 nm thick, 5 mol\% Au-doped STO buffer, self-field critical current densities, \textit{J}$_{\textrm{c}}$$^{\textrm{sf}}$, at 77 K of {\textasciitilde}2.4 MA cm$^{\textrm{−2}}$ and critical currents, \textit{I}$_{\textrm{c}}$$^{\textrm{sf}}$, up to 700 A (cm-width)$^{\textrm{−1}}$ were achieved. The \textit{J}$_{\textrm{c}}$ value is virtually independent of thickness and the growth rates are very high ({\textasciitilde}1 µm min$^{\textrm{−1}}$). From transmission electron microscopy (TEM), Y$_{\textrm{2}}$O$_{\textrm{3}}$ nanocloud extended defects ({\textasciitilde}100 nm in size) were identified as the pinning defects in the films. Enhanced random pinning was induced by the presence of Au in the buffer.},
	language = {en},
	journal = {Supercond. Sci. Technol.},
	author = {Kursumovic, A. and Maiorov, B. and Durrell, J. H. and Wang, H. and Zhou, H. and Stan, L. and Harrington, S. and Wimbush, S. C. and Holesinger, T. G. and MacManus-Driscoll, J. L.},
	year = {2009},
	pages = {015009},
	file = {Kursumovic et al. - 2009 - High Ic, YBa2Cu3O7−x films grown at very high rate.pdf:C\:\\Users\\scwim\\OneDrive\\Work\\Zotero Library\\Kursumovic et al. - 2009 - High Ic, YBa2Cu3O7−x films grown at very high rate.pdf:application/pdf},
}

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L."],"bibdata":{"bibtype":"article","type":"article","title":"High I$_{\\textrm{c}}$, YBa$_{\\textrm{2}}$Cu$_{\\textrm{3}}$O$_{\\textrm{7−x}}}$ films grown at very high rates by liquid assisted growth incorporating lightly Au-doped SrTiO$_{\\textrm{3}}$ buffers","volume":"22","issn":"0953-2048","url":"/publications/10.1088/0953-2048/22/1/015009.pdf","doi":"10.1088/0953-2048/22/1/015009","abstract":"YBa$_{\\textrm{2}}$Cu$_{\\textrm{3}}$O$_{\\textrm{7−x}}}$ (YBCO) thick films were grown by hybrid liquid phase epitaxy (HLPE) on (001) SrTiO$_{\\textrm{3}}$ (STO) substrates. In the presence of a 100 nm thick, 5 mol% Au-doped STO buffer, self-field critical current densities, J$_{\\textrm{c}}$$^{\\textrm{sf}}$, at 77 K of ~2.4 MA cm$^{\\textrm{−2}}$ and critical currents, I$_{\\textrm{c}}$$^{\\textrm{sf}}$, up to 700 A (cm-width)$^{\\textrm{−1}}$ were achieved. The J$_{\\textrm{c}}$ value is virtually independent of thickness and the growth rates are very high (~1 µm min$^{\\textrm{−1}}$). 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