Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100). Lamagna, L., Wiemer, C., Baldovino, S., Molle, A., Perego, M., Schamm-Chardon, S., Coulon, P. E., & Fanciulli, M. Applied Physics Letters, 95(12):122902, September, 2009. WOS:000270243800050doi abstract bibtex La-doped ZrO2 thin films grown by O-3-based atomic layer deposition directly on Ge(100) exhibit a dielectric constant of 29. Upon annealing in N-2 at 400 degrees C, a high kappa value \textgreater40 is extracted for film thickness below 15 nm. Compositional depth profiling allows to correlate this observation with a remarkable Ge interdiffusion from the substrate which is consistent with the stabilization of the tetragonal ZrO2 phase. Ge interaction with the oxide stack and the formation of a germanate-like interfacial region, which acts as an electrical passivation for the Ge surface, are also investigated. (C) 2009 American Institute of Physics. [doi:10.1063/1.3227669]
@article{lamagna_thermally_2009,
title = {Thermally induced permittivity enhancement in {La}-doped {ZrO2} grown by atomic layer deposition on {Ge}(100)},
volume = {95},
issn = {0003-6951},
doi = {10.1063/1.3227669},
abstract = {La-doped ZrO2 thin films grown by O-3-based atomic layer deposition directly on Ge(100) exhibit a dielectric constant of 29. Upon annealing in N-2 at 400 degrees C, a high kappa value {\textgreater}40 is extracted for film thickness below 15 nm. Compositional depth profiling allows to correlate this observation with a remarkable Ge interdiffusion from the substrate which is consistent with the stabilization of the tetragonal ZrO2 phase. Ge interaction with the oxide stack and the formation of a germanate-like interfacial region, which acts as an electrical passivation for the Ge surface, are also investigated. (C) 2009 American Institute of Physics. [doi:10.1063/1.3227669]},
language = {English},
number = {12},
journal = {Applied Physics Letters},
author = {Lamagna, L. and Wiemer, C. and Baldovino, S. and Molle, A. and Perego, M. and Schamm-Chardon, S. and Coulon, P. E. and Fanciulli, M.},
month = sep,
year = {2009},
note = {WOS:000270243800050},
keywords = {Ge, gate dielectrics, interface-state density, phase, stacks},
pages = {122902},
}
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