Low-temperature electron transport on semiconductor surfaces

Low-temperature electron transport on semiconductor surfaces. Lastapis, M., Riedel, D., Mayne, A., Bobrov, K., & Dujardin, G. Low Temperature Physics, 29(3):196-201, 2003. cited By 4

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The low-temperature electron transport on semiconductor surfaces has been studied using an ultrahigh-vacuum, variable temperature scanning tunneling microscope (STM). The STM I(V) spectroscopy performed at various temperatures has made it possible to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the highly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved, whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K. © 2003 American Institute of Physics.

@ARTICLE{Lastapis2003196,
author={Lastapis, M. and Riedel, D. and Mayne, A. and Bobrov, K. and Dujardin, G.},
title={Low-temperature electron transport on semiconductor surfaces},
journal={Low Temperature Physics},
year={2003},
volume={29},
number={3},
pages={196-201},
doi={10.1063/1.1542440},
note={cited By 4},
url={https://www.scopus.com/inward/record.uri?eid=2-s2.0-21144435752&doi=10.1063%2f1.1542440&partnerID=40&md5=4e8d7e0d4d9733cb0c2cc169e7bc54e2},
affiliation={Laboratoire de Photophysique Moleculaire, Batiment 210, Universite Paris-Sud, 91405 Orsay Cedex, France},
abstract={The low-temperature electron transport on semiconductor surfaces has been studied using an ultrahigh-vacuum, variable temperature scanning tunneling microscope (STM). The STM I(V) spectroscopy performed at various temperatures has made it possible to investigate the temperature dependence (300 K to 35 K) of the surface conductivity of three different semiconductor surfaces: highly doped n-type Si(100), p-type Si(100), and hydrogenated C(100). Low temperature freezing of specific surface electronic channels on the highly doped n-type Si(100) and moderately doped p-type Si(100) surfaces could be achieved, whereas the total surface conductivity on the hydrogenated C(100) surface can be frozen below only 180 K. © 2003 American Institute of Physics.},
correspondence_address1={Lastapis, M.; Laboratoire de Photophysique Moleculaire, Batiment 210, Universite Paris-Sud, 91405 Orsay Cedex, France},
issn={1063777X},
language={English},
abbrev_source_title={Low Temp. Phys},
document_type={Article},
source={Scopus},
}

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