@ARTICLE{LeBeau2009-of,
  title    = "Stoichiometry optimization of homoepitaxial oxide thin films
              using x-ray diffraction",
  author   = "LeBeau, James M and Engel-Herbert, Roman and Jalan, Bharat and
              Cagnon, Joel Jo{\"e}l and Moetakef, Pouya and Stemmer, Susanne
              and Stephenson, G Brian",
  abstract = "Homoepitaxial SrTiO(3) thin films grown by molecular beam epitaxy
              are analyzed using high-resolution x-ray diffraction and
              transmission electron microscopy. Measured 00L x-ray scans from
              stoichiometric and nonstoichiometric films are compared with
              calculations that account for the effects of film thickness,
              lattice parameter, fractional site occupancy, and an offset
              between film and substrate at the interface. It is found that
              thickness fringes, commonly observed around Bragg reflections
              even in stoichiometric homoepitaxial SrTiO(3) films, arise from a
              film/substrate interface offset. Transmission electron microscopy
              studies confirm the presence of strain at those homoepitaxial
              interfaces that show an offset in x-ray diffraction. The
              consequences for stoichiometry optimization of homoepitaxial
              films using high-resolution x-ray diffraction and the quality of
              regrown oxide interfaces are discussed. (C) 2009 American
              Institute of Physics. (doi: 10.1063/1.3243696)",
  journal  = "Appl. Phys. Lett.",
  volume   =  95,
  number   =  14,
  pages    = "142905",
  month    =  oct,
  year     =  2009,
  keywords = "growth;molecular-beam epitaxy;srtio3 films;surface;LeBeau;HfO2",
  language = "English",
  issn     = "0003-6951",
  doi      = "10.1063/1.3243696"
}

{"_id":"Cus6WoWmuYPwZZ5jf","bibbaseid":"lebeau-engelherbert-jalan-cagnon-moetakef-stemmer-stephenson-stoichiometryoptimizationofhomoepitaxialoxidethinfilmsusingxraydiffraction-2009","author_short":["LeBeau, J. M","Engel-Herbert, R.","Jalan, B.","Cagnon, J. J.","Moetakef, P.","Stemmer, S.","Stephenson, G B."],"bibdata":{"bibtype":"article","type":"article","title":"Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction","author":[{"propositions":[],"lastnames":["LeBeau"],"firstnames":["James","M"],"suffixes":[]},{"propositions":[],"lastnames":["Engel-Herbert"],"firstnames":["Roman"],"suffixes":[]},{"propositions":[],"lastnames":["Jalan"],"firstnames":["Bharat"],"suffixes":[]},{"propositions":[],"lastnames":["Cagnon"],"firstnames":["Joel","Joël"],"suffixes":[]},{"propositions":[],"lastnames":["Moetakef"],"firstnames":["Pouya"],"suffixes":[]},{"propositions":[],"lastnames":["Stemmer"],"firstnames":["Susanne"],"suffixes":[]},{"propositions":[],"lastnames":["Stephenson"],"firstnames":["G","Brian"],"suffixes":[]}],"abstract":"Homoepitaxial SrTiO(3) thin films grown by molecular beam epitaxy are analyzed using high-resolution x-ray diffraction and transmission electron microscopy. Measured 00L x-ray scans from stoichiometric and nonstoichiometric films are compared with calculations that account for the effects of film thickness, lattice parameter, fractional site occupancy, and an offset between film and substrate at the interface. It is found that thickness fringes, commonly observed around Bragg reflections even in stoichiometric homoepitaxial SrTiO(3) films, arise from a film/substrate interface offset. Transmission electron microscopy studies confirm the presence of strain at those homoepitaxial interfaces that show an offset in x-ray diffraction. The consequences for stoichiometry optimization of homoepitaxial films using high-resolution x-ray diffraction and the quality of regrown oxide interfaces are discussed. (C) 2009 American Institute of Physics. (doi: 10.1063/1.3243696)","journal":"Appl. Phys. Lett.","volume":"95","number":"14","pages":"142905","month":"October","year":"2009","keywords":"growth;molecular-beam epitaxy;srtio3 films;surface;LeBeau;HfO2","language":"English","issn":"0003-6951","doi":"10.1063/1.3243696","bibtex":"@ARTICLE{LeBeau2009-of,\n title = \"Stoichiometry optimization of homoepitaxial oxide thin films\n using x-ray diffraction\",\n author = \"LeBeau, James M and Engel-Herbert, Roman and Jalan, Bharat and\n Cagnon, Joel Jo{\\\"e}l and Moetakef, Pouya and Stemmer, Susanne\n and Stephenson, G Brian\",\n abstract = \"Homoepitaxial SrTiO(3) thin films grown by molecular beam epitaxy\n are analyzed using high-resolution x-ray diffraction and\n transmission electron microscopy. Measured 00L x-ray scans from\n stoichiometric and nonstoichiometric films are compared with\n calculations that account for the effects of film thickness,\n lattice parameter, fractional site occupancy, and an offset\n between film and substrate at the interface. It is found that\n thickness fringes, commonly observed around Bragg reflections\n even in stoichiometric homoepitaxial SrTiO(3) films, arise from a\n film/substrate interface offset. Transmission electron microscopy\n studies confirm the presence of strain at those homoepitaxial\n interfaces that show an offset in x-ray diffraction. The\n consequences for stoichiometry optimization of homoepitaxial\n films using high-resolution x-ray diffraction and the quality of\n regrown oxide interfaces are discussed. (C) 2009 American\n Institute of Physics. (doi: 10.1063/1.3243696)\",\n journal = \"Appl. Phys. Lett.\",\n volume = 95,\n number = 14,\n pages = \"142905\",\n month = oct,\n year = 2009,\n keywords = \"growth;molecular-beam epitaxy;srtio3 films;surface;LeBeau;HfO2\",\n language = \"English\",\n issn = \"0003-6951\",\n doi = \"10.1063/1.3243696\"\n}\n\n","author_short":["LeBeau, J. M","Engel-Herbert, R.","Jalan, B.","Cagnon, J. J.","Moetakef, P.","Stemmer, S.","Stephenson, G B."],"key":"LeBeau2009-of","id":"LeBeau2009-of","bibbaseid":"lebeau-engelherbert-jalan-cagnon-moetakef-stemmer-stephenson-stoichiometryoptimizationofhomoepitaxialoxidethinfilmsusingxraydiffraction-2009","role":"author","urls":{},"keyword":["growth;molecular-beam epitaxy;srtio3 films;surface;LeBeau;HfO2"],"metadata":{"authorlinks":{}}},"bibtype":"article","biburl":"https://paperpile.com/eb/hvQdZzcQAp","dataSources":["XvQYbdoqrgtkncm5N"],"keywords":["growth;molecular-beam epitaxy;srtio3 films;surface;lebeau;hfo2"],"search_terms":["stoichiometry","optimization","homoepitaxial","oxide","thin","films","using","ray","diffraction","lebeau","engel-herbert","jalan","cagnon","moetakef","stemmer","stephenson"],"title":"Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction","year":2009}