@article{ ISI:000268282200066,
Author = {Lee, Sanghan and Chen, Ke and Baek, Seung Hyup and Dai, Wenqing and
   Moeckly, Brian H. and Li, Qi and Xi, Xiaoxing and Rzchowski, Mark S. and
   Eom, Chang Beom},
Title = {{Growth of MgB2 Thin Films In Situ by RF Magnetron Sputtering With a
   Pocket Heater}},
Journal = {{IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY}},
Year = {{2009}},
Volume = {{19}},
Number = {{3, 3}},
Pages = {{2811-2814}},
Month = {{JUN}},
Abstract = {{We have grown MgB2 thin films using RF magnetron sputtering combined
   with a pocket heater. This technique relies on a low-pressure
   environment for sputter deposition of boron and a high-pressure
   environment for thermal evaporation of Mg. We have obtained
   superconducting MgB2 thin films using substrate temperatures of 480-540
   degrees C and Mg furnace temperatures of 730-750 degrees C. The T-c
   onset of the thin films increased from 21.6 K to 35 K with increasing
   substrate temperature due to better crystallization. Higher boron
   deposition rates also increase T-c. The highest J(c) of the films at 5 K
   and near zero magnetic field is 1.5 MA/cm(2) which is comparatively
   lower than the films grown using a pocket heater with boron deposition
   by chemical vapor deposition or electron beam evaporation. The chemical
   composition analysis by WDS exhibits a high concentration of oxygen and
   carbon in the MgB2 films, which is due to a high background base
   pressure and an impure B sputtering target. These results suggest that
   the T-c, J(c), and resistivity of MgB2 films are mainly determined by an
   inhomogeneous microstructure and superconducting percolation paths
   through impurity phases such as MgO. By comparison with carbon or oxygen
   doped films, the high impurity content in the sputtered MgB2 films might
   act as method to achieve high H-c2.}},
DOI = {{10.1109/TASC.2009.2018812}},
ISSN = {{1051-8223}},
ResearcherID-Numbers = {{Lee, Sanghan/C-8876-2012
   Eom, Chang-Beom/I-5567-2014
   Baek, Seung-Hyub/B-9189-2013}},
ORCID-Numbers = {{Lee, Sanghan/0000-0002-5807-864X
   }},
Unique-ID = {{ISI:000268282200066}},
}

{"_id":"u6dFG63yPkHk5ofBA","bibbaseid":"lee-chen-baek-dai-moeckly-li-xi-rzchowski-etal-growthofmgb2thinfilmsinsitubyrfmagnetronsputteringwithapocketheater-2009","downloads":0,"creationDate":"2018-09-17T23:43:09.779Z","title":"Growth of MgB2 Thin Films In Situ by RF Magnetron Sputtering With a Pocket Heater","author_short":["Lee, S.","Chen, K.","Baek, S. H.","Dai, W.","Moeckly, B. H.","Li, Q.","Xi, X.","Rzchowski, M. S.","Eom, C. B."],"year":2009,"bibtype":"article","biburl":"http://oxide.engr.wisc.edu/newWebsite/papers/oxide.bib","bibdata":{"bibtype":"article","type":"article","author":[{"propositions":[],"lastnames":["Lee"],"firstnames":["Sanghan"],"suffixes":[]},{"propositions":[],"lastnames":["Chen"],"firstnames":["Ke"],"suffixes":[]},{"propositions":[],"lastnames":["Baek"],"firstnames":["Seung","Hyup"],"suffixes":[]},{"propositions":[],"lastnames":["Dai"],"firstnames":["Wenqing"],"suffixes":[]},{"propositions":[],"lastnames":["Moeckly"],"firstnames":["Brian","H."],"suffixes":[]},{"propositions":[],"lastnames":["Li"],"firstnames":["Qi"],"suffixes":[]},{"propositions":[],"lastnames":["Xi"],"firstnames":["Xiaoxing"],"suffixes":[]},{"propositions":[],"lastnames":["Rzchowski"],"firstnames":["Mark","S."],"suffixes":[]},{"propositions":[],"lastnames":["Eom"],"firstnames":["Chang","Beom"],"suffixes":[]}],"title":"Growth of MgB2 Thin Films In Situ by RF Magnetron Sputtering With a Pocket Heater","journal":"IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY","year":"2009","volume":"19","number":"3, 3","pages":"2811-2814","month":"JUN","abstract":"We have grown MgB2 thin films using RF magnetron sputtering combined with a pocket heater. This technique relies on a low-pressure environment for sputter deposition of boron and a high-pressure environment for thermal evaporation of Mg. We have obtained superconducting MgB2 thin films using substrate temperatures of 480-540 degrees C and Mg furnace temperatures of 730-750 degrees C. The T-c onset of the thin films increased from 21.6 K to 35 K with increasing substrate temperature due to better crystallization. Higher boron deposition rates also increase T-c. The highest J(c) of the films at 5 K and near zero magnetic field is 1.5 MA/cm(2) which is comparatively lower than the films grown using a pocket heater with boron deposition by chemical vapor deposition or electron beam evaporation. The chemical composition analysis by WDS exhibits a high concentration of oxygen and carbon in the MgB2 films, which is due to a high background base pressure and an impure B sputtering target. These results suggest that the T-c, J(c), and resistivity of MgB2 films are mainly determined by an inhomogeneous microstructure and superconducting percolation paths through impurity phases such as MgO. By comparison with carbon or oxygen doped films, the high impurity content in the sputtered MgB2 films might act as method to achieve high H-c2.","doi":"10.1109/TASC.2009.2018812","issn":"1051-8223","researcherid-numbers":"Lee, Sanghan/C-8876-2012 Eom, Chang-Beom/I-5567-2014 Baek, Seung-Hyub/B-9189-2013","orcid-numbers":"Lee, Sanghan/0000-0002-5807-864X ","unique-id":"ISI:000268282200066","bibtex":"@article{ ISI:000268282200066,\nAuthor = {Lee, Sanghan and Chen, Ke and Baek, Seung Hyup and Dai, Wenqing and\n Moeckly, Brian H. and Li, Qi and Xi, Xiaoxing and Rzchowski, Mark S. and\n Eom, Chang Beom},\nTitle = {{Growth of MgB2 Thin Films In Situ by RF Magnetron Sputtering With a\n Pocket Heater}},\nJournal = {{IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY}},\nYear = {{2009}},\nVolume = {{19}},\nNumber = {{3, 3}},\nPages = {{2811-2814}},\nMonth = {{JUN}},\nAbstract = {{We have grown MgB2 thin films using RF magnetron sputtering combined\n with a pocket heater. This technique relies on a low-pressure\n environment for sputter deposition of boron and a high-pressure\n environment for thermal evaporation of Mg. We have obtained\n superconducting MgB2 thin films using substrate temperatures of 480-540\n degrees C and Mg furnace temperatures of 730-750 degrees C. The T-c\n onset of the thin films increased from 21.6 K to 35 K with increasing\n substrate temperature due to better crystallization. Higher boron\n deposition rates also increase T-c. The highest J(c) of the films at 5 K\n and near zero magnetic field is 1.5 MA/cm(2) which is comparatively\n lower than the films grown using a pocket heater with boron deposition\n by chemical vapor deposition or electron beam evaporation. The chemical\n composition analysis by WDS exhibits a high concentration of oxygen and\n carbon in the MgB2 films, which is due to a high background base\n pressure and an impure B sputtering target. These results suggest that\n the T-c, J(c), and resistivity of MgB2 films are mainly determined by an\n inhomogeneous microstructure and superconducting percolation paths\n through impurity phases such as MgO. By comparison with carbon or oxygen\n doped films, the high impurity content in the sputtered MgB2 films might\n act as method to achieve high H-c2.}},\nDOI = {{10.1109/TASC.2009.2018812}},\nISSN = {{1051-8223}},\nResearcherID-Numbers = {{Lee, Sanghan/C-8876-2012\n Eom, Chang-Beom/I-5567-2014\n Baek, Seung-Hyub/B-9189-2013}},\nORCID-Numbers = {{Lee, Sanghan/0000-0002-5807-864X\n }},\nUnique-ID = {{ISI:000268282200066}},\n}\n\n","author_short":["Lee, S.","Chen, K.","Baek, S. H.","Dai, W.","Moeckly, B. H.","Li, Q.","Xi, X.","Rzchowski, M. S.","Eom, C. B."],"key":"ISI:000268282200066","id":"ISI:000268282200066","bibbaseid":"lee-chen-baek-dai-moeckly-li-xi-rzchowski-etal-growthofmgb2thinfilmsinsitubyrfmagnetronsputteringwithapocketheater-2009","role":"author","urls":{},"downloads":0,"html":""},"search_terms":["growth","mgb2","thin","films","situ","magnetron","sputtering","pocket","heater","lee","chen","baek","dai","moeckly","li","xi","rzchowski","eom"],"keywords":[],"authorIDs":["5ba03c0cebfd3910000001e0"],"dataSources":["zArY7xMz8KdDswhhx"]}