Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters. Le Ru, E. C., Howe, P., Jones, T. S., & Murray, R. physica status solidi (c), 0(4):1221--1224, July, 2003.
Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters [link]Paper  doi  bibtex   
@article{le_ru_strain_2003,
	title = {Strain engineered {InAs}/{GaAs} quantum dots for 1.5 μm emitters},
	volume = {0},
	issn = {1610-1634, 1610-1642},
	url = {http://doi.wiley.com/10.1002/pssc.200303051},
	doi = {10.1002/pssc.200303051},
	language = {en},
	number = {4},
	urldate = {2017-04-04TZ},
	journal = {physica status solidi (c)},
	author = {Le Ru, Eric C. and Howe, Patrick and Jones, Tim S. and Murray, Ray},
	month = jul,
	year = {2003},
	pages = {1221--1224}
}

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