Strain-engineered InAs/GaAs quantum dots for long-wavelength emission. Le Ru, E. C., Howe, P., Jones, T. S., & Murray, R. Physical Review B, April, 2003.
Paper doi bibtex @article{le_ru_strain-engineered_2003,
title = {Strain-engineered {InAs}/{GaAs} quantum dots for long-wavelength emission},
volume = {67},
issn = {0163-1829, 1095-3795},
url = {http://link.aps.org/doi/10.1103/PhysRevB.67.165303},
doi = {10.1103/PhysRevB.67.165303},
language = {en},
number = {16},
urldate = {2017-04-04TZ},
journal = {Physical Review B},
author = {Le Ru, E. C. and Howe, P. and Jones, T. S. and Murray, R.},
month = apr,
year = {2003}
}
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