Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement

Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory (STT MRAM) array for yield enhancement. Li, J., Augustine, C., Salahuddin, S., & Roy, K. In 2008 45th ACM/IEEE Design Automation Conference (<strong>DAC</strong>), pages 278–283, June, 2008. (Acceptance Rate: 23%, 147 out of 639)
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@INPROCEEDINGS{li2008dac, 
author={Jing Li and Charles Augustine and Sayeef Salahuddin and Kaushik Roy}, 
booktitle={2008 45th ACM/IEEE Design Automation Conference (<strong>DAC</strong>)}, 
title={Modeling of failure probability and statistical design of Spin-Torque Transfer Magnetic Random Access Memory ({STT MRAM}) array for yield enhancement}, 
year={2008}, 
date={2008-06-08},
volume={}, 
number={}, 
pages={278--283}, 
keywords={conference, failure analysis,magnetic storage,magnetoelectronics,optimisation,random-access storage,coupled electromagnetic dynamics,failure probability,on-chip embedded memories,spin-torque transfer magnetic random access memory,spintronic device,statistical optimization methodology,yield enhancement,Couplings,Failure analysis,Flash memory,Magnetic analysis,Magnetic devices,Predictive models,Probability,Random access memory,Read-write memory,Scalability,STT MRAM,Yield}, 
doi={10.1145/1391469.1391540}, 
ISSN={0738-100X}, 
month={June},
note = {(Acceptance Rate: <u>23\%</u>, 147 out of 639)},
}

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