Variation-tolerant Spin-Torque Transfer (STT) MRAM array for yield enhancement

Variation-tolerant Spin-Torque Transfer (STT) MRAM array for yield enhancement. Li, J., Liu, H., Salahuddin, S., & Roy, K. In 2008 IEEE Custom Integrated Circuits Conference (<strong>CICC</strong>), pages 193–196, Sept, 2008.
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@INPROCEEDINGS{li2008cicc, 
author={Jing Li and Haixin Liu and S. Salahuddin and Kaushik Roy}, 
booktitle={2008 IEEE Custom Integrated Circuits Conference (<strong>CICC</strong>)}, 
title={Variation-tolerant Spin-Torque Transfer ({STT}) {MRAM} array for yield enhancement}, 
year={2008}, 
date={2008-09-21},
volume={}, 
number={}, 
pages={193--196}, 
keywords={conference, Green's function methods,MRAM devices,DRAM,SRAM,flash memories,nonequilibrium Green's function,optimization,variation-tolerant spin-torque transfer MRAM array,yield enhancement,Circuit simulation,Circuit stability,Circuit synthesis,Electrodes,Green's function methods,Magnetic tunneling,Random access memory,Read-write memory,Robust stability,Scalability}, 
doi={10.1109/CICC.2008.4672056}, 
ISSN={0886-5930}, 
month={Sept},}

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