Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials

Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials. Li, J., Luan, B., Hsu, T. H., Zhu, Y., Martyna, G., Newns, D., Cheng, H. Y., Raoux, S., Lung, H. L., & Lam, C. In 2011 International Electron Devices Meeting (<strong>IEDM</strong>), pages 12.5.1–12.5.4, Dec, 2011.
doi bibtex

@INPROCEEDINGS{li2011iedm, 
author={Jing Li and Binquan Luan and T. H. Hsu and Y. Zhu and G. Martyna and D. Newns and H. Y. Cheng and S. Raoux and H. L. Lung and C. Lam}, 
booktitle={2011 International Electron Devices Meeting (<strong>IEDM</strong>)}, 
title={Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials}, 
year={2011}, 
volume={}, 
number={}, 
pages={12.5.1--12.5.4}, 
keywords={conference, amorphous semiconductors,antimony alloys,atomic structure,germanium alloys,phase change materials,phase change memories,tellurium alloys,Ge,Sb,Te,amorphous germanium,atomic structure,drift-insensitive phase change material,electrical characteristics,first principle ab initio method,material-device characterization,phase change memory,resistance drift,tellurium ternary alloys,Conductivity,Phase change materials,Phase change memory,Programming,Resistance,Temperature measurement}, 
doi={10.1109/IEDM.2011.6131541}, 
ISSN={0163-1918}, 
month={Dec},
%note={(Acceptance Rate*: <u>33\%</u>)},
}

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