Resistance drift in phase change memory (<strong>invited</strong>). Li, J., Luan, B., & Lam, C. In 2012 IEEE International Reliability Physics Symposium (<strong>IRPS</strong>), pages 6C.1.1–6C.1.6, April, 2012.
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@INPROCEEDINGS{li2012irps, 
author={Jing Li and Binquan Luan and Chung Lam}, 
booktitle={2012 IEEE International Reliability Physics Symposium (<strong>IRPS</strong>)}, 
title={Resistance drift in phase change memory (<strong>invited</strong>)}, 
year={2012}, 
volume={}, 
number={}, 
pages={6C.1.1--6C.1.6}, 
keywords={conference, circuit reliability,molecular dynamics method,phase change memories,MLC PCM,SR,amorphous chalcogenide material,atomic structure,material engineering,mitigation technique,phase change memory,physics model,quantum molecular dynamic simulation,reliability issue,structural relaxation,time dependent resistance drift,Annealing,Kinetic theory,Phase change materials,Resistance,Strontium,Temperature measurement,drift,multi-level cell,phase change memory,structural relaxation}, 
doi={10.1109/IRPS.2012.6241871}, 
ISSN={1541-7026}, 
month={April},}

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