Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective (<strong>best paper</strong>)

Design Paradigm for Robust Spin-Torque Transfer Magnetic RAM (STT MRAM) From Circuit/Architecture Perspective (<strong>best paper</strong>). Li, J., Ndai, P., Goel, A., Salahuddin, S., & Roy, K. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 18(12):1710–1723, Dec, 2010.
doi bibtex

@ARTICLE{li2010tvlsi, 
author={Jing Li and Patrick Ndai and Ashish Goel and Sayeef Salahuddin and Kaushik Roy}, 
journal={IEEE Transactions on Very Large Scale Integration (VLSI) Systems}, 
title={Design Paradigm for Robust Spin-Torque Transfer Magnetic {RAM} ({STT} {MRAM}) From Circuit/Architecture Perspective (<strong>best paper</strong>)}, 
year={2010}, 
volume={18}, 
number={12}, 
pages={1710--1723}, 
keywords={journal, integrated circuit design,magnetic storage,random-access storage,high memory yield,parametric failures,process variations,robust spin-torque transfer magnetic RAM,Circuit stability,Costs,Failure analysis,Flash memory,Magnetic circuits,Performance analysis,Random access memory,Read-write memory,Robustness,Scalability,Spin-torque transfer (STT),magnetic ram (MRAM),memory yield,parametric failures}, 
doi={10.1109/TVLSI.2009.2027907}, 
ISSN={1063-8210}, 
month={Dec},
}

Downloads: 0