A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications. Li, K. & Rakheja, S. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018, pages 1–2, 2018. IEEE.
A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications [link]Paper  doi  bibtex   
@inproceedings{DBLP:conf/drc/LiR18,
  author    = {Kexin Li and
               Shaloo Rakheja},
  title     = {A unified current-voltage and charge-voltage model of quasi-ballistic
               III-nitride HEMTs for {RF} applications},
  booktitle = {76th Device Research Conference, {DRC} 2018, Santa Barbara, CA, USA,
               June 24-27, 2018},
  pages     = {1--2},
  publisher = {{IEEE}},
  year      = {2018},
  url       = {https://doi.org/10.1109/DRC.2018.8442193},
  doi       = {10.1109/DRC.2018.8442193},
  timestamp = {Mon, 09 Aug 2021 01:32:18 +0200},
  biburl    = {https://dblp.org/rec/conf/drc/LiR18.bib},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}

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