Thermal conductivity of Si/SiGe superlattice nanowires

Thermal conductivity of Si/SiGe superlattice nanowires. Li, D., Wu, Y., Fan, R., Yang, P., & Majumdar, A. Applied Physics Letters, 83:3186-3188, 2003/10/13, 2003.

Paper abstract bibtex

The thermal conductivities of individual single crystalline Si/SiGe superlatticenanowires with diameters of 58 and 83 nm were measured over a temperature range from 20 to 320 K. The observed thermal conductivity shows similar temperature dependence as that of two-dimensional Si/SiGe superlattice films. Comparison with the thermal conductivity data of intrinsic Si nanowires suggests that alloy scattering of phonons in the Si–Ge segments is the dominant scattering mechanism in these superlatticenanowires. In addition, boundary scattering also contributes to thermal conductivity reduction.

@article {703,
	title = {Thermal conductivity of Si/SiGe superlattice nanowires},
	journal = {Applied Physics Letters},
	volume = {83},
	year = {2003},
	month = {2003/10/13},
	pages = {3186-3188},
	abstract = {<p>The thermal conductivities of individual single crystalline Si/SiGe superlatticenanowires with diameters of 58 and 83 nm were measured over a temperature range from 20 to 320 K. The observed thermal conductivity shows similar temperature dependence as that of two-dimensional Si/SiGe superlattice films. Comparison with the thermal conductivity data of intrinsic Si nanowires suggests that alloy scattering of phonons in the Si\&ndash;Ge segments is the dominant scattering mechanism in these superlatticenanowires. In addition, boundary scattering also contributes to thermal conductivity reduction.</p>
},
	keywords = {Nanowires, Phonons, Superlattices, Temperature measurement, Thermal conductivity},
	isbn = {0003-6951, 1077-3118},
	url = {http://scitation.aip.org/content/aip/journal/apl/83/15/10.1063/1.1619221},
	author = {Li, Deyu and Wu, Yiying and Fan, Rong and Yang, Peidong and Majumdar, Arun}
}

Downloads: 0