A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory

A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory. Li, J., Wu, C. I., Lewis, S. C., Morrish, J., Wang, T. Y., Jordan, R., Maffitt, T., Breitwisch, M., Schrott, A., Cheek, R., Lung, H. L., & Lam, C. In 2011 3rd IEEE International Memory Workshop (<strong>IMW</strong>), pages 1–4, May, 2011.
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@INPROCEEDINGS{li2011imw, 
author={Jing Li and C. I. Wu and S. C. Lewis and J. Morrish and T. Y. Wang and R. Jordan and T. Maffitt and M. Breitwisch and A. Schrott and R. Cheek and H. L. Lung and C. Lam}, 
booktitle={2011 3rd IEEE International Memory Workshop (<strong>IMW</strong>)}, 
title={A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory}, 
year={2011}, 
volume={}, 
number={}, 
pages={1--4}, 
keywords={conference, CMOS digital integrated circuits,NAND circuits,flash memories,phase change memories,2Mcell PCM chip,CMOS technology,NAND flash,analog resistance levels,frequency 50 MHz,phase change memory,reconfigurable sensing scheme,size 90 nm,time 35 mus to 50 mus,time 5 mus,variable level storage,word length 8 bit,Clocks,Electrical resistance measurement,Flash memory,Phase change materials,Radiation detectors,Resistance}, 
doi={10.1109/IMW.2011.5873227}, 
ISSN={2159-483X}, 
month={May},}

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