An Ultra-low Power 8T SRAM with Vertical Read Word Line and Data Aware Write Assist. Lu, L., Yoo, T., Le, V. L., & Kim, T. T. In A-SSCC, pages 1-2, 2018. IEEE.
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Paper bibtex @inproceedings{conf/asscc/LuYLK18,
added-at = {2019-01-07T00:00:00.000+0100},
author = {Lu, Lu and Yoo, Taegeun and Le, Van Loi and Kim, Tony Tae-Hyoung},
biburl = {https://www.bibsonomy.org/bibtex/2955041b912aaac89808d6c221c782d6c/dblp},
booktitle = {A-SSCC},
crossref = {conf/asscc/2018},
ee = {https://doi.org/10.1109/ASSCC.2018.8579292},
interhash = {d226070e772f332518044c6b049daae3},
intrahash = {955041b912aaac89808d6c221c782d6c},
isbn = {978-1-5386-6413-1},
keywords = {dblp},
pages = {1-2},
publisher = {IEEE},
timestamp = {2019-01-08T11:43:30.000+0100},
title = {An Ultra-low Power 8T SRAM with Vertical Read Word Line and Data Aware Write Assist.},
url = {http://dblp.uni-trier.de/db/conf/asscc/asscc2018.html#LuYLK18},
year = 2018
}
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